SE1050W SIGE [SiGe Semiconductor, Inc.], SE1050W Datasheet - Page 7

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SE1050W

Manufacturer Part Number
SE1050W
Description
Manufacturer
SIGE [SiGe Semiconductor, Inc.]
Datasheet
The diagram below shows the bondpad configuration of the SE1050W Transimpedance Amplifier. Note that the
diagram is not to scale. All bondpads are 92 µm x 92 µm with a passivation opening of 82 µm x 82 µm. All VCC and
GND pads must be bonded to minimize inductive effects.
Mechanical die visual inspection criteria per MIL-STD-883 Method 2010.10 Condition B Class Level B.
45-DST-01 § Rev 1.5 § May 24/02
121.7 113.2
121.7 113.2
116.5 117.0 131.7 115.0
116.5 117.0 131.7 115.0
All Dimensions in Microns (µm)
All Dimensions in Microns (µm)
Side View
Side View
LightCharger
View
View
Top
Top
1053.0
1053.0
385.0
385.0
212.8
212.8
10 Gb/s Transimpedance Amplifier
188.1
188.1
115.0
115.0
SE1050W
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Final

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