TPCP8103-H_09 TOSHIBA [Toshiba Semiconductor], TPCP8103-H_09 Datasheet
TPCP8103-H_09
Related parts for TPCP8103-H_09
TPCP8103-H_09 Summary of contents
Page 1
... V V GSS −4 − −4 0. 150 °C ch −55 to 150 °C T stg 1 TPCP8103-H Unit: mm 0.33±0.05 0. 0.475 0. 0.65 2.9±0.1 A 0.8±0.05 0.025 S +0.1 S 0.28 0.17±0.02 -0.11 +0.13 1.12 -0.12 +0.13 1.12 -0.12 +0.1 1. Source 5. Drain 0.28 -0.11 2. Source 6. Drain 3. Source 7. Drain 4. Gate 8. Drain JEDEC ― ...
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... Year of manufacture (The last digit of the calendar year) Symbol Max Unit R 74.4 °C/W th (ch-a) (Note 2a) R 148.8 °C/W th (ch-a) (Note 2b) (b) Device mounted on a glass-epoxy board (b) FR-4 25.4 × 25.4 × 0.8 (Unit: mm Ω TPCP8103-H FR-4 25.4 × 25.4 × 0.8 (Unit: mm) (b) = -4.8A 2009-12-10 ...
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... −4 (Ta = 25°C) Symbol Test Condition ⎯ I DRP = −4 DSF TPCP8103-H Min Typ. Max = 0 V ⎯ ⎯ ± ⎯ ⎯ − −40 ⎯ ⎯ −20 ⎯ ⎯ −0.8 ⎯ −2.0 ⎯ ...
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... Gate-source voltage V 1000 Common source Ta = 25°C Pulse test 100 10 1 −0.1 −100 Drain Current I 4 TPCP8103-H I – −6 −4 −3.5 − −3.0 V −2.7 −2.5 −2.3 −2.0 −0.8 −1.2 −1.6 −2 ( – ...
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... Common source −0 − −1 mA Pulse test 0 −40 −100 −80 (V) Ambient temperature Ta (°C) −50 − −32 V − −16 −20 −8 −10 0 160 0 5 TPCP8103-H I – −5 −10 − −1 0 0.4 0.6 0.8 1 1.2 ( – 120 ...
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... Single-pulse Ta = 25°C Curves must be derated linearly with increase in V DSS temperature. MAX. −0.1 −0.1 −1 −10 Drain-source voltage – 0 Pulse width t (s) w −100 (V) 6 TPCP8103-H ② ① Single-pulse 100 1000 2009-12-10 ...
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... Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of noncompliance with applicable laws and regulations. 7 TPCP8103-H 2009-12-10 ...