TPCA8009-H_07 TOSHIBA [Toshiba Semiconductor], TPCA8009-H_07 Datasheet
TPCA8009-H_07
Related parts for TPCA8009-H_07
TPCA8009-H_07 Summary of contents
Page 1
... 150 °C ch −55 to 150 T °C stg 1 TPCA8009-H Unit: mm 0.4±0.1 1.27 0. 0.15±0. 0.595 A 5.0±0.2 0. 4.25±0 0.8±0 SOURCE 4 : GATE DRAIN JEDEC ― JEITA ― TOSHIBA 2-5Q1A Weight: 0 ...
Page 2
... Year of manufacture (The last digit of the calendar year) Symbol Max Unit R 2.78 °C/W th (ch-c) (Tc=25℃) R 44.6 °C/W th (ch-a) (Note 2a) R 78.1 °C/W th (ch-a) (Note 2b) (b) Device mounted on a glass-epoxy board (b) FR-4 25.4 × 25.4 × 0.8 (Unit: mm Ω TPCA8009-H FR-4 25.4 × 25.4 × 0.8 (Unit: mm) (b) 2007-12-18 ...
Page 3
... (Ta = 25°C) Symbol Test Condition ⎯ I DRP = DSF TPCA8009-H Min Typ. Max = 0 V ⎯ ⎯ ± ⎯ ⎯ 100 ⎯ ⎯ 150 ⎯ ⎯ 150 ⎯ ⎯ 100 ⎯ 2.0 4.0 ⎯ ...
Page 4
... Drain-source voltage 1 Gate-source voltage V 10000 Common source Ta = 25° Pulse test 1000 100 10 100 0.1 4 TPCA8009-H I – 6 – Common source Ta = 25°C Pulse test ...
Page 5
... C iss 3 C oss rss 0 −80 100 ( (nC) 5 TPCA8009-H − −1.2 −0.4 −0.8 Drain-source voltage V (V) DS − Common source = 1mA I D Pulse test − ...
Page 6
... Tc = 25°C Curves must be derated linearly with increase in temperature. V DSS max 0 100 Drain-source voltage – 0 Pulse width t ( 160 0 1000 (V) 6 TPCA8009-H (2) (1) (3) Single pulse 100 1000 P – 120 160 Case temperature Tc (°C) 2007-12-18 ...
Page 7
... Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 7 TPCA8009-H 20070701-EN 2007-12-18 ...