T1G6003028-FS TRIQUINT [TriQuint Semiconductor], T1G6003028-FS Datasheet - Page 2

• Manufacturer Part Number: T1G6003028-FS
• Manufacturer: TRIQUINT [TriQuint Semiconductor]

Operation of this device outside the parameter ranges
given above may cause permanent damage. These
are stress ratings only, and functional operation of the
device at these conditions is not implied.
T1G6003028-FS
30W, 28V, DC – 6 GHz, GaN RF Power Transistor
Absolute Maximum Ratings
Electrical Specifications
Recommended operating conditions apply unless otherwise specified: T
RF Characteristics
Note: VSWR testing performed with increasing real impedance value only from reference Z to 10 times reference Z.
Data Sheet: Rev B 09/12/2012
© 2012 TriQuint Semiconductor, Inc.
Specifications
Characteristics
Load Pull Performance at 3.0 GHz (V
Linear Gain
Output Power at 3 dB Gain Compression
Drain Efficiency at 3 dB Gain Compression
Power-Added Efficiency at 3 dB Gain Compression
Gain at 3 dB Compression
Load Pull Performance at 6.0 GHz (V
Linear Gain
Output Power at 3 dB Gain Compression
Drain Efficiency at 3 dB Gain Compression
Power-Added Efficiency at 3 dB Gain Compression
Gain at 3 dB Compression
Performance at 5.60 GHz in the 5.4 to 5.9 GHz Eval. Board (V
Linear Gain
Output Power at 3 dB Gain Compression
Drain Efficiency at 3 dB Gain Compression
Gain at 3 dB Compression
Narrow Band Performance at 5.60 GHz (V
Impedance Mismatch Ruggedness
Parameter
Drain to Gate Voltage, Vd – Vg
Drain Voltage, Vd
Gate Voltage, Vg
Drain Current, Id
Gate Current, Ig
Power Dissipation, Pdiss
RF Input Power, CW, T = 25ºC
Channel Temperature, Tch
Mounting Temperature (30 sec)
Storage Temperature
Rating
+40 V
-8 to 0 V
5.5 A
-10 to 10 mA
47.5 W
40 dBm
275
320
-40 to 150
40 V
o
o
DS
DS
C
C
= 28 V, I
= 28 V, I
DS
o
C
= 28 V, I
DQ
DQ
- 2 of 13 -
= 200 mA; Pulse: 100µs, 20%)
= 200 mA; Pulse: 100µs, 20%)
Recommended Operating Conditions
Electrical specifications are measured at specified test
conditions. Specifications are not guaranteed over all
recommended operating conditions.
DQ
Parameter
Id (Peak Current)
Vg
Channel
Temperature, Tch
Power Dissipation,
Pdiss (CW)
Power Dissipation,
Pdiss (Pulse)
Vd
Idq
= 200 mA, CW at P1dB)
A
DS
Symbol
= 25 ° C, Vd = 28 V, Idq = 200 mA, Vg = -3.6 V
PAE
PAE
VSWR
DE
DE
DE
G
G
G
G
P
G
P
G
P
Connecting the Digital World to the Global Network
= 28 V, I
3dB
3dB
3dB
3dB
3dB
3dB
LIN
LIN
LIN
3dB
3dB
3dB
3dB
3dB
Disclaimer: Subject to change without notice
DQ
12.0
22.5
45.0
Min
= 200 mA; Pulse: 100µs, 20%)
9.0
Min Typical Max Units
15.2
33.5
68.2
64.1
12.2
14.5
33.0
50.0
46.5
11.5
14.0
32.5
50.0
11.0
Typ
2500
-3.6
200
205
28
Max
10:1
30
40
Units
dB
W
%
%
dB
dB
W
%
%
dB
dB
W
%
dB
V
mA
mA
V
o
W
W
C
®