T1G6003028-FS TRIQUINT [TriQuint Semiconductor], T1G6003028-FS Datasheet - Page 6

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T1G6003028-FS

Manufacturer Part Number
T1G6003028-FS
Description
Manufacturer
TRIQUINT [TriQuint Semiconductor]
Datasheet
T1G6003028-FS
30W, 28V, DC – 6 GHz, GaN RF Power Transistor
Performance over Temperature: Gain, Efficiency and Output Power
Performance measured in TriQuint’s 5.4 GHz to 5.9 GHz Evaluation Board at 3 dB compression.
Data Sheet: Rev B 09/12/2012
© 2012 TriQuint Semiconductor, Inc.
V
V
DS
DS
T1G6003028-FS Gain vs. Temp
T1G6003028-FS Drain Eff. vs. Temp
= 28 V, I
= 28 V, I
DQ
DQ
= 200 mA; Pulse: 100 µs, 20%
= 200 mA; Pulse: 100 µs, 20%
.
.
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Connecting the Digital World to the Global Network
V
V
DS
DS
T1G6003028-FS Power vs. Temp.
T1G6003028-FS PAE vs. Temp.
= 28 V, I
= 28 V, I
Disclaimer: Subject to change without notice
DQ
DQ
= 200 mA; Pulse: 100 µs, 20%
= 200 mA; Pulse: 100 µs, 20%
®

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