T1G6003028-FS TRIQUINT [TriQuint Semiconductor], T1G6003028-FS Datasheet - Page 7

• Manufacturer Part Number: T1G6003028-FS
• Manufacturer: TRIQUINT [TriQuint Semiconductor]

T1G6003028-FS
30W, 28V, DC – 6 GHz, GaN RF Power Transistor
Evaluation Board Performance: 5.4 to 5.9 GHz
Data Sheet: Rev B 09/12/2012
© 2012 TriQuint Semiconductor, Inc.
Drain Efficiency and Power Added Efficiency at 3 dB Compression
50.00
45.00
40.00
35.00
30.00
25.00
20.00
15.00
10.00
55
50
45
40
35
5.00
5.40
5.40
V
V
Output Power and Gain at 3 dB Compression
DS
DS
= 28 V, I
= 28 V, I
5.50
5.50
DQ
DQ
Frequency (GHz)
= 200 mA; Pulse: 100 µsec, 20%
= 200 mA; Pulse: 100 µsec, 20%
5.60
Frequency (GHz)
5.60
- 7 of 13 -
5.70
5.70
Connecting the Digital World to the Global Network
Power (W)
Gain (dB)
5.80
Disclaimer: Subject to change without notice
Drain Eff. (%)
PAE (%)
5.80
5.90
20.00
18.00
16.00
14.00
12.00
10.00
8.00
6.00
4.00
2.00
5.90
®