K7R641884M SAMSUNG [Samsung semiconductor], K7R641884M Datasheet
K7R641884M
Manufacturer Part Number
K7R641884M
Description
2Mx36 & 4Mx18 QDRTM II b4 SRAM
Manufacturer
SAMSUNG [Samsung semiconductor]
Datasheet
1.K7R641884M.pdf
(18 pages)
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K7R643684M
K7R641884M
Document Title
Revision History
specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-
tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the
2Mx36-bit, 4Mx18-bit QDR
Rev. No.
0.0
0.1
0.2
0.3
0.4
0.5
History
1. Initial document.
1. Update AC timing characteristics.
2. Change the JTAG instruction coding.
1. Change the AC timing characteristics. (-25/-20 parts)
2. Correct the overshoot and undershoot timing diagrams.
3. Change the JTAG Block diagrams.
4. Update the Boundary scan exit order.
1. Correct the JTAG ID register definition
2. Correct the AC timing parameter (delete the tKHKH Max value)
1. Add the Power-on Sequence specification
1. Correct the pin name table
TM
II b4 SRAM
- 1 -
2Mx36 & 4Mx18 QDR
Sep 14, 2002
Oct. 24, 2002
Feb. 18, 2003
Mar. 20, 2003
Aug. 16, 2004
Oct. 18, 2004
Draft Date
TM
Preliminary
II b4 SRAM
Advance
Preliminary
Preliminary
Preliminary
Preliminary
Preliminary
Remark
Oct. 2004
Rev 0.5
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