K7R641884M SAMSUNG [Samsung semiconductor], K7R641884M Datasheet - Page 11

• Manufacturer Part Number: K7R641884M
• Description: 2Mx36 & 4Mx18 QDRTM II b4 SRAM
• Manufacturer: SAMSUNG [Samsung semiconductor]

K7R643684M
PIN CAPACITANCE
Note: 1. Parameters are tested with RQ=250 and V
K7R641884M
THERMAL RESISTANCE
Note: Junction temperature is a function of on-chip power dissipation, package thermal impedance, mounting site temperature and mounting site
Note: For power-up, V
AC TEST CONDITIONS
Note: Parameters are tested with RQ=250
Overershoot Timing
Address Control Input Capacitance
Input and Output Capacitance
Clock Capacitance
Junction to Ambient
Junction to Case
Junction to Pins
Output Power Supply Voltage
Output Timing Reference Level
Core Power Supply Voltage
Input High/Low Level
Input Reference Level
Input Rise/Fall Time
V
V
2. Periodically sampled and not 100% tested.
thermal impedance. T
DDQ
DDQ
V
+0.25V
DDQ
V
+0.5V
IL
Parameter
PRMETER
PRMETER
IH
V
J
DDQ
=T
20% t
A
+0.3V and V
+ P
D
KHKH
x
JA
(MIN)
DD
Symbol
V
T
V
V
V
IH
R
DDQ
REF
1.7V and V
DD
/T
/V
F
IL
DDQ
SYMBOL
=1.5V.
C
C
C
OUT
CLK
IN
DDQ
SYMBOL
1.25/0.25
1.7~1.9
1.4~1.9
V
0.3/0.3
Value
0.75
DDQ
JA
JC
JB
1.4V t
/2
- 11 -
TESTCONDITION
200ms
2Mx36 & 4Mx18 QDR
Undershoot Timing
V
V
OUT
Unit
IN
ns
V
V
V
V
V
=0V
-
V
V
=0V
SS
SS
-0.25V
-0.5V
V
V
AC TEST OUTPUT LOAD
IH
SS
SRAM
TBD
TBD
TBD
TYP
TYP
TBD
TBD
TBD
V
REF
ZQ
20% t
250
0.75V
MAX
TBD
TBD
TBD
KHKH
(MIN)
TM
Zo=50
Unit
C
C
C
Preliminary
/W
/W
/W
II b4 SRAM
Unit
pF
pF
pF
V
DDQ
NOTES
NOTES
Oct. 2004
Rev 0.5
/2
50