K7R641884M SAMSUNG [Samsung semiconductor], K7R641884M Datasheet - Page 10

• Manufacturer Part Number: K7R641884M
• Description: 2Mx36 & 4Mx18 QDRTM II b4 SRAM
• Manufacturer: SAMSUNG [Samsung semiconductor]

K7R643684M
K7R641884M
AC ELECTRICAL CHARACTERISTICS
Notes: 1. This condition is for AC function test only, not for AC parameter test.
AC TIMING CHARACTERISTICS
Notes: 1. All address inputs must meet the specified setup and hold times for all latching clock edges.
Clock
Clock Cycle Time (K, K, C, C)
Clock Phase Jitter (K, K, C, C)
Clock High Time (K, K, C, C)
Clock Low Time (K, K, C, C)
Clock to Clock (K
Clock to data clock (K
DLL Lock Time (K, C)
K Static to DLL reset
Output Times
C, C High to Output Valid
C, C High to Output Hold
C, C High to Echo Clock Valid
C, C High to Echo Clock Hold
CQ, CQ High to Output Valid
CQ, CQ High to Output Hold
C, High to Output High-Z
C, High to Output Low-Z
Setup Times
Address valid to K rising edge
Control inputs valid to K rising edge
Data-in valid to K, K rising edge
Hold Times
K rising edge to address hold
K rising edge to control inputs hold
K, K rising edge to data-in hold
Input High Voltage
Input Low Voltage
2. Control singles are R, W,BW
3. If C,C are tied high, K,K become the references for C,C timing parameters.
4. To avoid bus contention, at a given voltage and temperature tCHQX
5. Clock phase jitter is the variance from clock rising edge to the next expected clock rising edge.
6. Vdd slew rate must be less than 0.1V DC per 50 ns for DLL lock retention. DLL lock time begins once Vdd and input clock are stable.
7. Echo clock is very tightly controlled to data valid/data hold. By design, there is a
2. To maintain a valid level, the transitioning edge of the input must :
a) Sustain a constant slew rate from the current AC level through the target AC level, V
b) Reach at least the target AC level
c) After the AC target level is reached, continue to maintain at least the target DC level, V
The specs as shown do not imply bus contention because tCHQX
(0 C, 1.9V) than tCHQZ, which is a MAX parameter(worst case at 70 C, 1.7V)
It is not possible for two SRAMs on the same board to be at such different voltage and temperature.
The data sheet parameters reflect tester guardbands and test setup variations.
PARAMETER
PARAMETER
K , C
C , K
C )
C )
0
,BW
SYMBOL
t
t
t
t
t
1
t
t
KC reset
t
t
t
t
t
t
CHCQV
CHCQX
CQHQV
CQHQX
t
t
t
t
t
KC lock
CHQX1
t
t
KC var
t
t
KHCH
CHQV
CHQX
CHQZ
KHKH
KHKH
AVKH
DVKH
KHAX
KHDX
KHKL
KLKH
IVKH
KHIX
and (BW
(V
2
, BW
1024
-0.45
-0.45
-0.27
-0.45
DD
3.30
1.32
1.32
1.49
0.00
0.40
0.40
0.30
0.40
0.40
0.30
MIN
30
=1.8V 0.1V, T
3
, also for x36)
SYMBOL
V
V
-30
IH
IL
(V
MAX
(AC)
(AC)
5.25
0.20
1.45
0.45
0.45
0.27
0.45
DD
=1.8V 0.1V, T
- 10 -
1
1024
-0.45
-0.45
-0.30
-0.45
is a MIN parameter that is worst case at totally different test conditions
4.00
1.60
1.60
1.80
0.00
0.50
0.50
0.35
0.50
0.50
0.35
MIN
1
2Mx36 & 4Mx18 QDR
30
A
is bigger than tCHQZ.
=0 C to +70 C)
-25
MAX
6.30
0.20
1.80
0.45
0.45
0.30
0.45
V
REF
A
=0 C to +70 C)
MIN
-
+ 0.2
ns variation from echo clock to data.
IL(AC)
-0.45
-0.45
-0.35
-0.45
1024
5.00
2.00
2.00
2.20
0.00
0.60
0.60
0.40
0.60
0.60
0.40
MIN
30
IL(DC)
or V
-20
or V
IH(AC)
MAX
7.88
0.20
2.30
0.45
0.45
0.35
0.45
IH(DC)
V
REF
MAX
-
- 0.2
1024
-0.50
-0.50
-0.40
-0.50
6.00
2.40
2.40
2.70
0.00
0.70
0.70
0.50
0.70
0.70
0.50
MIN
30
TM
-16
MAX
Preliminary
8.40
0.20
2.80
0.50
0.50
0.40
0.50
UNIT
II b4 SRAM
V
V
UNIT NOTE
cycle
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
NOTES
Oct. 2004
1,2
1,2
Rev 0.5
5
6
3
3
7
7
3
3
2