SI5908DC_06 VISHAY [Vishay Siliconix], SI5908DC_06 Datasheet
SI5908DC_06
Related parts for SI5908DC_06
SI5908DC_06 Summary of contents
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N-Channel 20-V (D-S) MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS DESCRIPTION The attached spice model describes the typical electrical characteristics of the n-channel vertical DMOS. model is extracted and optimized over the ...
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SPICE Device Model Si5908DC Vishay Siliconix SPECIFICATIONS (T = 25°C UNLESS OTHERWISE NOTED) J Parameter Static Gate Threshold Voltage a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a Forward Voltage b Dynamic Total Gate Charge Gate-Source Charge ...
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COMPARISON OF MODEL WITH MEASURED DATA (T Document Number: 73096 S-60073Rev. B, 23-Jan-06 SPICE Device Model Si5908DC Vishay Siliconix =25°C UNLESS OTHERWISE NOTED) J www.vishay.com 3 ...
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All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or ...