SI5908DC_06 VISHAY [Vishay Siliconix], SI5908DC_06 Datasheet - Page 2

• Manufacturer Part Number: SI5908DC_06
• Description: N-Channel 20-V (D-S) MOSFET
• Manufacturer: VISHAY [Vishay Siliconix]

SPICE Device Model Si5908DC
Notes
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2%.
b. Guaranteed by design, not subject to production testing.
2
Vishay Siliconix
www.vishay.com
SPECIFICATIONS (T
Static
Gate Threshold Voltage
On-State Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
b
Parameter
a
a
a
J
= 25°C UNLESS OTHERWISE NOTED)
a
Symbol
V
r
I
DS(on)
V
Q
Q
D(on)
GS(th)
Q
g
SD
fs
gs
gd
g
V
DS
= 10 V, V
V
V
V
V
V
V
Test Condition
I
DS
DS
GS
GS
GS
S
DS
= 0.9 A, V
= V
= 4.5 V, I
= 2.5 V, I
= 1.8 V, I
≥ 5 V, V
= 10 V, I
GS
GS
, I
= 4.5 V, I
D
GS
D
= 250 µA
D
D
D
GS
= 4.4 A
= 4.4 A
= 4.1 A
= 1.9 A
= 4.5 V
= 0 V
D
= 4.4 A
Simulated
Data
0.030
0.033
0.037
0.53
0.85
0.71
119
5.1
26
1
Measured
Data
S-60073Rev. B, 23-Jan-06
0.032
0.036
0.042
0.80
0.85
22
Document Number: 73096
5
1
Unit
nC
Ω
V
A
S
V