M28F420 STMICROELECTRONICS [STMicroelectronics], M28F420 Datasheet
M28F420
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M28F420 Summary of contents
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... March 1995 This is preliminary infor mationon a new product now in developmen t or undergoing evaluation. Details are subject to change without notice. 44 TSOP56 ( 20mm Figure 1. Logic Diagram A0-A17 RP M28F410 M28F420 M28F410 M28F420 PRELIMINARY DATA 1 SO44 (M) DQ15A-1 15 DQ0-DQ14 BYTE AI01130C 1/38 ...
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... M28F410, M28F420 Figure 2A. TSOP Pin Connections A15 A14 A13 A12 A11 A10 M28F410 RP 14 M28F420 NC 15 (Normal A17 Warning Not Connected Don’t Use Table 2. Absolute Maximum Ratings Symbol T Ambient Operating Temperature ...
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... Device Code M28F420 Note DESCRIPTION The M28F410 and M28F420 FLASH MEMORIES are non-volatile memories that may be erased electrically at the block level and programmed by byte or word. The interface is directly compatible with most microprocessors. SO44 and TSOP56 packages are used. Organization The organization, as 512K 256K x 16, is selectable by an external BYTE signal ...
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... Block’ of 96K Bytes or 48K Words, and three ’Main Blocks’of 128KBytes or 64K Words. The M28F410 memory has the Boot Block at the top of the mem- ory address space (3FFFFh) and the M28F420 locates the Boot Block starting at the bottom (00000h). Erasure of each block takes typically 1 second and each block can be programmed and erased over 100,000 cycles ...
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... Power Saving The M28F410 and M28F420 have a number of power saving features. A CMOS standby mode is entered when the Chip Enable E and the Re- set/Power Down (RP) signals are at V supply current drops to typically deep ...
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... M28F410, M28F420 Table 8. AC Measurement Conditions Input Rise and Fall Times Input Pulse Voltages Input and Output Timing Ref. Voltages Figure 3. AC Testing Input Output Waveform SRAM Interface 3V 0V EPROM Interface 2.4V 0.45V (1) Table 9. Capacitance (T Symbol Parameter C Input Capacitance IN C Output Capacitance OUT Note: 1 ...
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... Byte program in progress Word program in progress Erase in progress Erase suspended I OH Boot block Program or Erase to 8mA typical in static operation. CC during a read operation. 0.2V. TTL levels V and M28F410, M28F420 Min OUT CC = 0mA OUT = 0mA OUT = 0mA OUT = 0mA ...
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... M28F410, M28F420 Table 11. DC Characteristics (T = – 10 Symbol Parameter I Input Leakage Current LI I Output Leakage Current LO ( Supply Current (Read Byte-wide) TTL CC ( Supply Current (Read Word-wide) TTL CC Supply Current (Read Byte-wide) CMOS (1, 3) ...
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... Byte program in progress Word program in progress Erase in progress Erase suspended Boot block Program or Erase to 8mA typical in static operation. CC during a read operation. 0.2V. TTL levels V and M28F410, M28F420 Min OUT CC = 0mA OUT = 0mA OUT = 0mA OUT = 0mA OUT ...
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... M28F410, M28F420 Table 13. Read AC Characteristics ( – Symbol Alt Parameter Address Valid AVAV RC Next Address Valid Address Valid AVQV ACC Output Valid Power Down High t t PHQV PWH to Output Valid Chip Enable Low to ( ELQX ...
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... Max Min 300 after the falling edge of E without increasing t ELQV GLQV M28F410, M28F420 M28F410 / 20 -90 -100 10 10 EPROM Interface Max Min Max Min 100 120 90 100 300 300 100 ...
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... M28F410, M28F420 Figure 5. Read Mode AC Waveforms 12/38 ...
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... 10 SRAM EPROM Interface Interface Min Max Min Max M28F410, M28F420 -100 -120 10 10 EPROM EPROM Interface Interface Min Max Min Max 100 120 100 120 35 35 ...
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... M28F410, M28F420 Figure 6. BYTE Mode AC Waveforms, BYTE Low to High A0-A17 E BYTE DQ0-DQ14 DQ15A-1 Note: G Low High, other timings as Read Mode AC waveforms. Figure 7. BYTE Mode AC Waveforms, BYTE High to Low A0-A17 E BYTE DQ0-DQ14 DQ15A-1 Note: G Low High, other timings as Read Mode AC waveforms. 14/38 VALID ...
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... Time is measured to Status Register Read giving bit b7 = ’1’. 3. For Program or Erase of the Boot Block RP must Time required for Relocking the Boot Block. 5. Sampled only, not 100% tested. = 12V 5%) PP Parameter Low M28F410, M28F420 (1) M28F410 / 20 -70 - 10% CC ...
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... M28F410, M28F420 Table 17B. Write AC Characteristics, Write Enable Controlled ( – Symbol Alt t t Write Cycle Time AVAV Power Down High to Write Enable Low PHWL Chip Enable Low to Write Enable Low ELWL Write Enable Low to Write Enable High ...
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... Time is measured to Status Register Read giving bit b7 = ’1’. 3. For Program or Erase of the Boot Block RP must Time required for Relocking the Boot Block. 5. Sampled only, not 100% tested. 5%) Parameter Low M28F410, M28F420 (1) M28F410 / 20 -80 - 10% ...
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... M28F410, M28F420 Table 18B. Write AC Characteristics, Write Enable Controlled (T = –40 to 125 12V A PP Symbol Alt t t Write Cycle Time AVAV Power Down High to Write Enable Low PHWL Chip Enable Low to Write Enable Low ELWL Write Enable Low to Write Enable High ...
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... Figure 8. Program & Erase AC Waveforms, W Controlled M28F410, M28F420 19/38 ...
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... M28F410, M28F420 Table 19A. Write AC Characteristics, Chip Enable Controlled ( – Symbol Alt t t Write Cycle Time AVAV Power Down High to Chip Enable Low PHEL Write Enable Low to Chip Enable Low WLEL Chip Enable Low to Chip Enable High ...
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... Time is measured to Status Register Read giving bit b7 = ’1’. 3. For Program or Erase of the Boot Block RP must Time required for Relocking the Boot Block. 5. Sampled only, not 100% tested. = 12V 5%) PP Parameter Low M28F410, M28F420 (1) M28F410 / 420 -100 -120 10 10% CC ...
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... M28F410, M28F420 Table 20A. Write AC Characteristics, Chip Enable Controlled (T = –40 to 125 12V A PP Symbol Alt t t Write Cycle Time AVAV Power Down High to Chip Enable Low PHEL Write Enable Low to Chip Enable Low WLEL Chip Enable Low to Chip Enable High ...
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... Time is measured to Status Register Read giving bit b7 = ’1’. 3. For Program or Erase of the Boot Block RP must Time required for Relocking the Boot Block. 5. Sampled only, not 100% tested. 5%) Parameter Low M28F410, M28F420 (1) M28F410 / 420 -100 -120 10 ...
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... M28F410, M28F420 Figure 9. Program & Erase AC Waveforms, E Controlled 24/38 ...
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... High the memory is organized x16 and data in- put/output uses DQ0-DQ15 with the memory ad- dressed by A0-A17 used for memory Programming and Erase tion requiring maximum 100 write and erase cycles measurements. M28F410, M28F420 M28F410 / 420 Min Typ Max 1.2 4.2 0.6 2.1 1 2.4 14 5%) M28F410 / 420 ...
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... MAIN BLOCK 00000h Memory Blocks The memory blocks of the M28F410 and M28F420 are shown in Figure 10. The differencebetween the two productsis simply an inversion of the block map to position the Boot Block at the top or bottom of the memory. The selection of the Boot Block at the top or bottom of the memory depends on the microprocessor needs ...
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... SGS- THOMSON is 20h, and the device codes are 0F2h for the M28F410 (Top Boot Block) and 0FAh for the M28F420 (Bottom Boot Block). These codes allow programming equipment or applications to auto- matically match their interfaceto the characteristics of the particular manufacturer’ ...
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... M28F410, M28F420 Erase (EE) instruction. This instruction uses two write operations. The first command written is the Erase Set-up command 20h. The second com- mand is the Erase Confirm command 0D0h. During the input of the second command an address of the block to be erased is given and this is latched into the memory ...
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... Interface must be reset by a Clear Status Register Instruction before data can be accessed. Automatic Power Saving The M28F410 and M28F420 memories place themselves in a lower power state when not being accessed. Following a Read operation, after a delay equal to the memory access time, the Supply ...
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... M28F410, M28F420 Figure 11. Program Flow-chart and Pseudo Code Start Write 40h Command Write Address & Data Read Status Register YES YES YES End Notes: 1. Status check Low) and b4 (Program Error) can be made after each byte/word programming or after a sequence. ...
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... Low Error (1) NO Command Sequence Error NO Erase Error (1) M28F410, M28F420 EE instruction: – write 20h command – write Block Address (A12-A17) & command 0D0h (memory enters read status state after the EE instruction) do: – read status register ( must be toggled instruction given execute ...
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... M28F410, M28F420 Figure 13. Erase Suspend & Resume Flow-chart and Pseudo Code Start Write 0B0h Command Read Status Register YES YES Write 0FFh Command Read data from another block Write 0D0h Command Erase Continues 32/ Erase Complete ES instruction: – write 0B0h command ...
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... P/E.C. status (Ready or Busy) is read on Status Register bit 7. NO 70h YES NO 50h YES CLEAR 40h or STATUS 10h YES PROGRAM SET-UP PROGRAM YES READY (2) NO READ STATUS M28F410, M28F420 NO NO 20h YES ERASE 0FFh SET-UP YES NO OD0h YES ERASE A COMMAND ERROR READ ARRAY NO AI01286C 33/38 ...
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... M28F410, M28F420 Figure 15. Command Interface and Program Erase Controller Flow-diagram (b) READ STATUS READ ARRAY Note: 2. P/E.C. status (Ready or Busy) is read on Status Register bit 7. 34/38 B ERASE NO SUSPENDED ? YES YES 70h NO NO YES 0D0h READ STATUS A ERASE (READ STATUS) YES READY ( 0B0h YES ...
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... X N Power Supplies blank Range, Array Organisation, Speed, etc...) refer to the current Memory CC M28F410, M28F420 1 TR Temp. Range Tape & Reel 3 –40 to 125 C 6 – Option Packing Package SO44 TSOP56 ...
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... M28F410, M28F420 TSOP56 - 56 lead Plastic Thin Small Outline 20mm Symb Typ 0. TSOP56 1 N/2 TSOP-a Drawing is not to scale 36/38 mm Min Max 1.20 0.05 0.15 0.95 1.05 0.17 0.27 0.10 0.21 19.80 20.20 18.30 18.50 13.90 14. 0. DIE C inches Typ Min 0.002 0.037 0.007 0.004 0.780 0.720 0.547 0.020 - 0.020 ...
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... 1. 0. SO44 SO-b Drawing is not to scale mm Min Max 2.42 2.62 0.22 0.23 2.25 2.35 0.50 0.10 0.25 28.10 28.30 13.20 13.40 15.90 16. M28F410, M28F420 inches Typ Min 0.095 0.009 0.089 0.004 1.106 0.520 0.050 0.626 0.031 Max 0.103 0.010 0.093 0.020 0.010 1.114 0.528 0.634 0.004 37/38 ...
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... M28F410, M28F420 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice ...