H55S1G22MFP-60 HYNIX [Hynix Semiconductor], H55S1G22MFP-60 Datasheet - Page 11

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H55S1G22MFP-60

Manufacturer Part Number
H55S1G22MFP-60
Description
1Gb (32Mx32bit) Mobile SDRAM
Manufacturer
HYNIX [Hynix Semiconductor]
Datasheet

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DC CHARACTERISTICS III
1. VDD / VDDQ = 1.8V
2. Related numerical values in this 45
3. With a on-chip temperature sensor of Mobile memory, auto temperature compensated self refresh will automatically
Rev 1.2 / Jun. 2008
adjust the interval of self-refresh operation according to ambient temperature variations.
Temp.
(
45
85
o
C)
4 Banks
450
900
o
C are examples for reference sample value only.
- Low Power (I
DD6
Memory Array
)
2 Banks
350
650
1Gbit (32Mx32bit) Mobile SDR Memory
1 Bank
H55S1G(2/3)2MFP Series
300
500
Unit
uA
uA
11
11

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