STF20NM60A STMICROELECTRONICS [STMicroelectronics], STF20NM60A Datasheet - Page 2

• Manufacturer Part Number: STF20NM60A
• Manufacturer: STMICROELECTRONICS [STMicroelectronics]

STB20NM60A-1/STP20NM60A/STF20NM60A
ABSOLUTE MAXIMUM RATINGS
( )
(1) I
(*) Limited only by maximum temperature allowed
THERMAL DATA
ELECTRICAL CHARACTERISTICS (T
ON/OFF
2/12
Rthj-case
Rthj-amb
V
Pulse width limited by safe operating area
Symbol
Symbol
dv/dt (1)
SD
R
V
I
(BR)DSS
DM
P
V
I
I
V
GS(th)
DS(on)
T
DSS
GSS
TOT
I
I
ISO
T
T
stg
GS
D
D
20A, di/dt 400 A/µs, V
j
l
( )
Drain-source
Breakdown Voltage
Zero Gate Voltage
Drain Current (V
Gate-body Leakage
Current (V
Gate Threshold Voltage
Static Drain-source On
Resistance
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Maximum Lead Temperature For Soldering Purpose
Gate-source Voltage
Drain Current (continuous) at T
Drain Current (continuous) at T
Drain Current (pulsed)
Total Dissipation at T
Derating Factor
Peak Diode Recovery voltage slope
Insulation Winthstand Voltage (DC)
Storage Temperature
Max. Operating Junction Temperature
Parameter
DS
DD
= 0)
GS
V
(BR)DSS
= 0)
C
Parameter
= 25°C
, T
j
I
V
V
V
V
V
D
T
CASE
DS
DS
GS
DS
GS
JMAX.
= 250 µA, V
C
C
= Max Rating, T
= 25°C
= 100°C
= Max Rating
= V
= ± 30V
= 10V, I
Test Conditions
= 25 °C UNLESS OTHERWISE SPECIFIED)
GS
, I
D
D
= 10A
GS
= 250 µA
= 0
C
Max
Max
= 125 °C
STB20NM60A-1
STP20NM60A
I
2
PAK/TO-220
12.6
0.65
192
1.2
Min.
20
80
600
--
2
–55 to 150
Value
62.5
±30
300
15
Typ.
0.25
3
STF20NM60A
TO-220FP
12.6(*)
2500
20(*)
80(*)
0.36
2.8
45
Max.
±100
0.29
10
1
4
W/°C
°C/W
°C/W
Unit
V/ns
Unit
µA
µA
nA
°C
°C
W
V
A
A
A
V
V
V