K9K1208Q0C Samsung semiconductor, K9K1208Q0C Datasheet - Page 9

• Manufacturer Part Number: K9K1208Q0C
• Description: 64M x 8 Bit / 32M x 16 Bit NAND Flash Memory
• Manufacturer: Samsung semiconductor

ABSOLUTE MAXIMUM RATINGS
NOTE :
1. Minimum DC voltage is -0.6V on input/output pins. During transitions, this level may undershoot to -2.0V for periods <30ns.
2. Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to the conditions
RECOMMENDED OPERATING CONDITIONS
(Voltage reference to GND, K9K12XXX0C-GCB0,JCB0
K9K1208Q0C
K9K1208D0C
K9K1208U0C
Voltage on any pin relative to V
Temperature Under Bias
Storage Temperature
Short Circuit Current
as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
Supply Voltage
Supply Voltage
Supply Voltage
Maximum DC voltage on input/output pins is V
Parameter
Parameter
Symbol
V
V
V
K9K1216Q0C
K9K1216D0C
K9K1216U0C
CCQ
CC
SS
K9K12XXX0C-XCB0
K9K12XXX0C-XCB0
SS
K9K12XXX0C-XIB0
K9K12XXX0C-XIB0
1.70
1.70
Min
K9K12XXQ0C(1.8V)
0
CC,
+0.3V which, during transitions, may overshoot to V
Typ.
1.8
1.8
0
:
Max
1.95
1.95
T
A
Symbol
0
V
=0 to 70°C, K9K12XXX0C-GIB0,JIB0
V
T
T
IN/OUT
V
Ios
CCQ
BIAS
STG
CC
9
Min
2.4
2.4
K9K12XXD0C(2.65V)
0
1.8V DEVICE
-0.6 to + 2.45
-0.2 to + 2.45
-0.2 to + 2.45
Typ.
2.65
2.65
0
Max
2.9
2.9
0
-10 to +125
-40 to +125
-65 to +150
CC
Rating
+2.0V for periods <20ns.
5
Min
2.7
2.7
K9K12XXU0C(3.3V)
:
0
3.3V/2.65V DEVICE
T
A
=-40 to 85°C)
FLASH MEMORY
-0.6 to + 4.6
-0.6 to + 4.6
-0.6 to + 4.6
Typ.
3.3
3.3
0
Max
3.6
3.6
0
Unit
Unit
mA
°C
°C
V
V
V
V