K9K1G08U0M-YIB0 Samsung semiconductor, K9K1G08U0M-YIB0 Datasheet - Page 18

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K9K1G08U0M-YIB0

Manufacturer Part Number
K9K1G08U0M-YIB0
Description
128M x 8 Bit NAND Flash Memory
Manufacturer
Samsung semiconductor
Datasheet
K9K1G08U0M-YCB0, K9K1G08U0M-YIB0
CLE
CE
WE
ALE
RE
I/O
R/B
Read2 Operation
CLE
CE
WE
ALE
RE
I/O
R/B
Read1 Operation
0
0
~
~
7
7
50h
00h or 01h
(Intercepted by CE)
(Read One Page)
M Address
Column
Address
A
0
~ A
A
0
7
~ A
A
A
0
4
7
A
~A
~A
9
~ A
A
3
7
: Valid Address
: Don
9
~ A
16
Page(Row)
Address
1 6
t
A
care
1 7
A
~ A
17
~ A
2 4
24
A
25,
A
A
25,
18
2 6
A
t
t
WB
WB
2 6
t
Busy
t
RR
R
t
AR2
Dout N
t
R
Dout N+1
t
AR2
t
RC
Selected
Row
t
RR
FLASH MEMORY
Dout N+2
t
CHZ
511+M
Dout
512
Dout 527
address M
Start
16

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