K9K1G08U0M-YIB0 Samsung semiconductor, K9K1G08U0M-YIB0 Datasheet - Page 22

• Manufacturer Part Number: K9K1G08U0M-YIB0
• Description: 128M x 8 Bit NAND Flash Memory
• Manufacturer: Samsung semiconductor

Multi-Plane Block Erase Operation into Plane 0~3 or Plane 4~7
K9K1G08U0M-YCB0, K9K1G08U0M-YIB0
CLE
CE
WE
ALE
RE
I/O
R/B
R/B
I/O
* For Multi-Plane Erase operation, Block address to be erased should be repeated before "D0H" command.
Ex.) Four-Plane Block Erase Operation
0
0
~
~
7
7
Block Erase Setup Command
60h
Address
A
t
60h
9
WC
~ A
2 6
Max. 4 times repeatable
A
9
60h
~ A
16
Page(Row)
A
Address
1 7
Address
~ A
24
A
25,
A
60h
2 6
Erase Confirm Command
DOh
Address
t
WB
22
60h
Busy
Address
t
BERS
D0h
Read Multi-Plane
StatusCommand
t
BERS
FLASH MEMORY
71h
71h
I/O 0