K9K1G08U0M-YIB0 Samsung semiconductor, K9K1G08U0M-YIB0 Datasheet - Page 26

• Manufacturer Part Number: K9K1G08U0M-YIB0
• Description: 128M x 8 Bit NAND Flash Memory
• Manufacturer: Samsung semiconductor

Figure 9. Read2 Operation
K9K1G08U0M-YCB0, K9K1G08U0M-YIB0
RE
R/B
I/O
CLE
CE
WE
ALE
R/B
I/O
Figure 10. Sequential Row Read1 Operation
0
0
~
~
7
7
The Sequential Read 1 and 2 operation is allowed only within a block and after the last page of a block is read-
out, the sequential read operation must be terminated by bringing CE high. When the page address moves onto
the next block, read command and address must be given.
00h
01h
( A
Don t Care)
50h
Block
4
~ A
A
7
Start Add.(4Cycle)
:
0
~ A
A
7
Start Add.(4Cycle)
0
1st half array
& A
~ A
9
3
~ A
( 00h Command)
& A
Data Field
26
9
~ A
2 6
2nd half array
t
R
1st half array
Spare Field
Data Field
Data Output
t
R
1st
1st
2nd
Nth
2nd half array
26
Spare Field
t
R
1st half array
Data Output
( 01h Command)
(528 Byte)
Data Field
Data Output(Sequential)
2nd
Spare Field
2nd half array
FLASH MEMORY
Spare Field
t
R
1st
2nd
Nth
Data Output
(528 Byte)
Nth