HY5DU281622ETP-25 HYNIX [Hynix Semiconductor], HY5DU281622ETP-25 Datasheet - Page 33

• Manufacturer Part Number: HY5DU281622ETP-25
• Description: 128M(8Mx16) gDDR SDRAM
• Manufacturer: HYNIX [Hynix Semiconductor]

Rev. 1.0 / Oct. 2005
CAPACITANCE
Note :
1. V
2. Pins not under test are tied to GND.
3. These values are guaranteed by design and are tested on a sample basis only.
OUTPUT LOAD CIRCUIT
Input Clock Capacitance
Input Capacitance
Input / Output Capacitance
DD
= min. to max., V
Parameter
(T
Output
DDQ
A
=25
= 2.375V to 2.625V, V
o
C, f=1MHz )
All other input-only pins
DQ, DQS, DM
CK, /CK
Zo=50Ω
O
DC = V
C
R
L
T
=30pF
=50Ω
DDQ
Pin
V
/2, V
TT
O
peak-to-peak = 0.2V
V
REF
Symbol
C
C
C
CK
IN
IO
1HY5DU281622ETP
Min
2
2
4
Max
3
3
5
Unit
pF
pF
pF
33