HY5DU561622FLTP-4 HYNIX [Hynix Semiconductor], HY5DU561622FLTP-4 Datasheet - Page 21

• Manufacturer Part Number: HY5DU561622FLTP-4
• Description: 256M(16Mx16) DDR SDRAM
• Manufacturer: HYNIX [Hynix Semiconductor]

Rev. 1.1 / Mar. 2008
ABSOLUTE MAXIMUM RATINGS
Note : Operation at above absolute maximum rating can adversely affect device reliability
DC OPERATING CONDITIONS
Note :
1. V
2. V
3. VIH (max) is acceptable VDDQ + 1.5V AC pulse width with < 5ns of duration
4. V
5. Supports 250/ 200 Mhz
DC CHARACTERISTICS I
Note : 1. V
Ambient Temperature
Storage Temperature
Voltage on Any Pin relative to V
Voltage on V
Voltage on V
Output Short Circuit Current
Power Dissipation
Soldering Temperature ⋅ Time
Power Supply Voltage
Power Supply Voltage
Input High Voltage
Input Low Voltage
Termination Voltage
Reference Voltage
Input Leakage Current
Output Leakage Current
Output High Voltage
Output Low Voltage
Peak to peak noise on V
DDQ
IL
REF
(min) is acceptable -1.5V AC pulse width with ≤ 5ns of duration.
is expected to be equal to 0.5*V
must not exceed the level of V
Parameter
Parameter
IN
DD
DDQ
= 0 to 3.6V, All other pins are not tested under V
Parameter
relative to V
relative to V
REF
SS
may not exceed
SS
SS
Symbol
Symbol
(TA=0 to 70
DD
V
V
V
V
V
V
V
DDQ
I
V
DDQ
I
REF
DD
LO
OH
OL
IH
TT
LI
IL
.
of the transmitting device, and to track variations in the dc level of the same.
(TA=0 to 70
±
2% of the dc value.
o
C, Voltage referenced to V
V
V
0.49*V
V
Symbol
REF
REF
T
IN
V
SOLDER
V
T
Min
TT
V
-0.3
, V
I
2.4
2.4
DDQ
T
P
STG
o
OS
Min.
DD
+ 0.15
- 0.04
A
D
C, Voltage referenced to V
+ 0.76
-5
-5
OUT
DDQ
-
IN
= 0V. 2. D
0.5*V
Typ.
V
2.6
2.6
REF
-
-
DDQ
V
OUT
SS
TT
Max
= 0V)
- 0.76
5
5
is disabled, V
-
V
SS
V
V
0.51*V
-0.5 ~ 3.6
-0.5 ~ 3.6
-0.5 ~ 3.6
-55 ~ 125
REF
DDQ
Rating
REF
260 ⋅ 10
0 ~ 70
= 0V)
Max
2.7
2.7
50
1
+ 0.04
- 0.15
+ 0.3
DDQ
1HY5DU561622FTP-5
OUT
HY5DU561622FTP-4
= 0 to 2.7V
Unit
uA
uA
V
V
Unit
V
V
V
V
V
V
I
I
OH
OL
o
Unit
C ⋅ sec
= +15.2mA
= -15.2mA
mA
o
o
W
Note
V
V
V
C
C
Note
1
2
5, 1
5
2
3
21