BAV70W T/R NXP Semiconductors, BAV70W T/R Datasheet - Page 3

• Manufacturer Part Number: BAV70W T/R
• Description: diode switching 100v 0.175a 3-pin umt t/r...
• Manufacturer: NXP Semiconductors

Philips Semiconductors
ELECTRICAL CHARACTERISTICS
T
THERMAL CHARACTERISTICS
Note
1. Device mounted on an FR4 printed-circuit board.
2002 Apr 05
Per diode
V
I
C
t
V
R
R
j
R
rr
SYMBOL
SYMBOL
F
fr
= 25 C unless otherwise specified.
d
th j-tp
th j-a
High-speed double diode
forward voltage
reverse current
diode capacitance
reverse recovery time
forward recovery voltage
thermal resistance from junction to tie-point
thermal resistance from junction to ambient
PARAMETER
PARAMETER
see Fig.3
see Fig.5
f = 1 MHz; V
when switched from I
R
when switched from I
see Fig.8
L
I
I
I
I
V
V
V
V
F
F
F
F
= 100 ; measured at I
R
R
R
R
= 1 mA
= 10 mA
= 50 mA
= 150 mA
= 25 V
= 75 V
= 25 V; T
= 75 V; T
3
R
note 1
= 0; see Fig.6
j
j
= 150 C
= 150 C
CONDITIONS
F
F
= 10 mA to I
= 10 mA; t
CONDITIONS
R
= 1 mA; see Fig.7
r
= 20 ns;
R
= 10 mA;
Product specification
715
855
1
1.25
30
2.5
60
100
1.5
4
1.75
VALUE
MAX.
300
625
BAV70W
mV
mV
V
V
nA
pF
ns
V
A
A
A
UNIT
UNIT
K/W
K/W