CY8CMBR2016-24LQXI Cypress Semiconductor, CY8CMBR2016-24LQXI Datasheet - Page 21

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CY8CMBR2016-24LQXI

Manufacturer Part Number
CY8CMBR2016-24LQXI
Description
Touch Screen Converters & Controllers
Manufacturer
Cypress Semiconductor
Type
Capacitive Touch Controllersr
Datasheet

Specifications of CY8CMBR2016-24LQXI

Rohs
yes
Input Type
16 Key
Supply Voltage
1.71 V to 5.5 V
Supply Current
3.3 mA
Operating Temperature
- 40 C to + 85 C
Package / Case
QFN-48
Maximum Operating Temperature
+ 85 C
Minimum Operating Temperature
- 40 C
Mounting Style
SMD/SMT
Factory Pack Quantity
490
Supply Voltage - Max
5.5 V
Supply Voltage - Min
1.71 V

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Electrical Specifications
This section presents the DC and AC electrical specifications of the CY8CMBR2044 device.
Table 8. Absolute Maximum Ratings
Table 9. Operating Temperature
DC Electrical Characteristics
The following table lists guaranteed maximum and minimum specifications for the entire voltage and temperature ranges.
Table 10. DC Chip Level Specifications
Document Number: 001-67921 Rev. *C
Notes
T
V
V
I
ESD
LU
T
T
T
V
I
I
I
I
I
I
I
MIG
DD
DA
DS
AV1
AV2
AV3
AV4
4. When V
5. After power down, ensure that V
6. For proper CapSense block functionality, if the drop in V
A
Parameter
STG
Parameter
C
J
Parameter
DD
IO
DD
slower than 1 V/500 µs. This helps to avoid triggering POR. The only other restriction on slew rates for any other voltage range or transition is the SR
parameter.
be between 1.8 V and 5.5 V
[4, 5, 6]
DD
remains in the range from 1.75 V to 1.9 V for more than 50 µs, the slew rate when moving from the 1.75 V to 1.9 V range to greater than 2 V must be
Storage temperature
Supply voltage relative to V
DC voltage on CapSense inputs
and digital output pins
Maximum current into any GPO
output pin
Latch up current
Electrostatic discharge voltage
Ambient temperature
Commercial temperature
Operational die temperature
Supply voltage
Supply current
Active current
Deep sleep current
Average current
Average current
Average current
Average current
Description
Description
Description
DD
falls below 100 mV before powering backup.
SS
DD
exceeds 5% of the base V
V
SS
2000
1.71
–0.5
Min
–40
–40
Min
Min
–55
–25
0
– 0.5
0.25
2.13
0.42
Typ
Typ
Typ
3.3
3.3
0.1
2.2
25
V
DD
DD
+100
+125
Max
Max
Max
+6.0
+85
+70
+50
200
5.5
4.0
4.0
0.5
, the rate at which V
+ 0.5
Unit
Unit
Unit
mA
mA
mA
mA
mA
mA
mA
mA
A
°C
°C
°C
°C
V
V
V
V
Conditions are V
Conditions are V
continuous sensor scan
Conditions are V
Conditions are V
16 buttons used, with 0% touch time, C
all sensors < 19 pFand scan rate = 250 ms
Conditions are V
16 buttons used, with 50% touch time, C
all sensors < 19 pFand scan rate = 250 ms,
Key Scan mode enabled
Conditions are V
16 buttons used, with 0% touch time, C
all sensors >19 pF and < 40 pF and scan
rate = 250 ms
Conditions are V
16 buttons used, with 50% touch time, C
all sensors >19 pF and < 40 pF and scan
rate = 250 ms, Key Scan mode enabled
Higher storage temperatures reduce data
retention time. Recommended storage
temperature is +25 °C ± 25 °C. Extended
duration storage temperatures above 85 °C
degrade reliability.
Human body model ESD
In accordance with JESD78 standard
DD
drops should not exceed 200 mV/s. Base V
DD
DD
DD
DD
DD
DD
DD
CY8CMBR2016
Notes
Notes
Notes
= 3.0 V, T
= 3.0 V, T
= 3.0 V, T
= 3.0 V, T
= 3.0 V, T
= 3.0 V, T
= 3.0 V, T
A
A
A
A
A
A
A
Page 21 of 28
= 25 °C and
= 25 °C and
= 25 °C and
= 25 °C and
= 25 °C
= 25 °C,
= 25 °C
POWER_UP
DD
P
P
P
P
can
of
of
of
of

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