M24256-DRMN6TP STMicroelectronics, M24256-DRMN6TP Datasheet - Page 27
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M24256-DRMN6TP
Manufacturer Part Number
M24256-DRMN6TP
Description
EEPROM 256 Kbit serial I2C EEPROM 3 Chip
Manufacturer
STMicroelectronics
Datasheet
1.M24256-DRMN6TP.pdf
(40 pages)
Specifications of M24256-DRMN6TP
Product Category
EEPROM
Rohs
yes
M24256-BW M24256-BR M24256-BF M24256-DR M24256-DF
Table 15.
1. If the application uses the voltage range F device with 2.5 V < V
2. Only for devices identified by process letter K (see
3. Characterized value, not tested in production.
4. The device is not selected after power-up, after a Read instruction (after the Stop condition), or after the
Symbol
I
I
V
I
I
V
please refer to
completion of the internal write cycle t
I
CC0
CC1
V
I
CC
CC
LO
LI
OL
IH
IL
Input leakage current
(E1, E2, SCL, SDA)
Output leakage current
Supply current (Read)
Supply current (Read)
Supply current (Write)
Standby supply current
Input low voltage
(SCL, SDA, WC)
Input high voltage
(SCL, SDA)
Input high voltage
(WC, E2, E1, E0)
Output low voltage
DC characteristics (M24256-BF, M24256-DF, device grade 6)
Table 13
Parameter
instead of this table.
Doc ID 6757 Rev 30
W
V
device in Standby mode
SDA in Hi-Z, external voltage
applied on SDA: V
V
V
During t
Device not selected
V
1.7 V V
1.7 V V
1.7 V V
I
(t
Test conditions
f
OL
c
IN
CC
CC
IN
W
= 1 MHz
= 1 mA, V
= V
= V
is triggered by the correct decoding of a Write instruction).
= 1.7 V, f
= 1.6 V, f
to those in
SS
SS
W
CC
CC
CC
Table
or V
1.7 V < V
or V
(2)
< 2.5 V
< 2.5 V
< 2.5 V
c
c
CC
CC
= 400 kHz
= 400 kHz
CC
17).
, V
= 1.7 V
(1)
Table
SS
CC
CC
(in addition
(4)
or V
CC
,
< 2.5 V
= 1.7 V
8)
< 5.5 V and -40 °C < TA < +85 °C,
CC
0.75 V
0.75 V
DC and AC parameters
–0.45
Min.
-
-
-
-
-
-
-
CC
CC
0.25 V
V
CC
Max.
2
± 2
± 2
0.8
2.5
0.8
6.5
0.2
1
(3)
+0.6
CC
Unit
27/40
mA
mA
mA
mA
µA
µA
µA
V
V
V
V