74AUP2G241GS,115 NXP Semiconductors, 74AUP2G241GS,115 Datasheet

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74AUP2G241GS,115

Manufacturer Part Number
74AUP2G241GS,115
Description
Buffers & Line Drivers 3.6 V XSON8
Manufacturer
NXP Semiconductors
Datasheet

Specifications of 74AUP2G241GS,115

Rohs
yes
Polarity
Non-Inverting
Supply Voltage - Max
3.6 V
Supply Voltage - Min
0.8 V
Maximum Operating Temperature
+ 125 C
Mounting Style
SMD/SMT
Package / Case
XSON-8
Factory Pack Quantity
5000
1. General description
2. Features and benefits
The 74AUP2G241 provides a dual non-inverting buffer/line driver with 3-state outputs.
The 3-state outputs are controlled by the output enable inputs 1OE and 2OE. A HIGH
level at pin 1OE causes output 1Y to assume a high-impedance OFF-state. A LOW level
at pin 2OE causes output 2Y to assume a high-impedance OFF-state.
Schmitt trigger action at all inputs makes the circuit tolerant to slower input rise and fall
times across the entire V
This device ensures a very low static and dynamic power consumption across the entire
V
This device is fully specified for partial power-down applications using I
The I
the device when it is powered down.
This device has an input-disable feature, which allows floating input signals. The input 1A
is disabled when the output enable input 1OE is HIGH. The input 2A is disabled when the
output enable input 2OE is LOW.
CC
74AUP2G241
Low-power dual buffer/line driver; 3-state
Rev. 7 — 11 February 2013
Wide supply voltage range from 0.8 V to 3.6 V
High noise immunity
Complies with JEDEC standards:
ESD protection:
Low static power consumption; I
Latch-up performance exceeds 100 mA per JESD 78 Class II
Inputs accept voltages up to 3.6 V
Low noise overshoot and undershoot < 10 % of V
Input-disable feature allows floating input conditions
I
OFF
range from 0.8 V to 3.6 V.
OFF
JESD8-12 (0.8 V to 1.3 V)
JESD8-11 (0.9 V to 1.65 V)
JESD8-7 (1.2 V to 1.95 V)
JESD8-5 (1.8 V to 2.7 V)
JESD8-B (2.7 V to 3.6 V)
HBM JESD22-A114F Class 3A exceeds 5000 V
MM JESD22-A115-A exceeds 200 V
CDM JESD22-C101E exceeds 1000 V
circuitry provides partial Power-down mode operation
circuitry disables the output, preventing the damaging backflow current through
CC
range from 0.8 V to 3.6 V.
CC
= 0.9 A (maximum)
CC
Product data sheet
OFF
.

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74AUP2G241GS,115 Summary of contents

Page 1

Low-power dual buffer/line driver; 3-state Rev. 7 — 11 February 2013 1. General description The 74AUP2G241 provides a dual non-inverting buffer/line driver with 3-state outputs. The 3-state outputs are controlled by the output enable inputs 1OE and 2OE. A ...

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... NXP Semiconductors  Multiple package options Specified from 40 C to +85 C and 40 C to +125 C  3. Ordering information Table 1. Ordering information Type number Package Temperature range Name 40 C to +125 C 74AUP2G241DC 40 C to +125 C 74AUP2G241GT 40 C to +125 C 74AUP2G241GF  ...

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... NXP Semiconductors 5. Functional diagram 1OE 1A 2OE 2A 001aah730 Fig 1. Logic symbol 6. Pinning information 6.1 Pinning 74AUP2G241 1OE GND 001aaf437 Fig 3. Pin configuration SOT765-1 74AUP2G241 Product data sheet 1Y 2Y Fig 2OE Fig 4. All information provided in this document is subject to legal disclaimers. ...

Page 4

... NXP Semiconductors 74AUP2G241 1OE GND 4 Transparent top view Fig 5. Pin configuration SOT996-2 6.2 Pin description Table 3. Pin description Symbol Pin SOT765-1, SOT833-1, SOT1089, SOT996-2, SOT1116 and SOT1203 1OE GND 4 2OE Functional description [1] Table 4. Function table ...

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... NXP Semiconductors 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V). Symbol Parameter V supply voltage CC I input clamping current IK V input voltage I I output clamping current OK V output voltage O I output current ...

Page 6

... NXP Semiconductors Table 7. Static characteristics At recommended operating conditions; voltages are referenced to GND (ground = 0 V). Symbol Parameter V HIGH-level output voltage OH V LOW-level output voltage OL I input leakage current I I OFF-state output current OZ I power-off leakage current OFF I additional power-off leakage OFF ...

Page 7

... NXP Semiconductors Table 7. Static characteristics At recommended operating conditions; voltages are referenced to GND (ground = 0 V). Symbol Parameter V LOW-level input voltage IL V HIGH-level output voltage OH V LOW-level output voltage OL I input leakage current I I power-off leakage current OFF I OFF-state output current OZ I additional power-off leakage ...

Page 8

... NXP Semiconductors Table 7. Static characteristics At recommended operating conditions; voltages are referenced to GND (ground = 0 V). Symbol Parameter V LOW-level input voltage IL V HIGH-level output voltage OH V LOW-level output voltage OL I input leakage current I I OFF-state output current OZ I power-off leakage current OFF I ...

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... NXP Semiconductors 11. Dynamic characteristics Table 8. Dynamic characteristics Voltages are referenced to GND (ground = 0 V); for test circuit see Symbol Parameter Conditions propagation delay nA to nY; see enable time 1OE to 1Y; see 2OE to 2Y; see ...

Page 10

... NXP Semiconductors Table 8. Dynamic characteristics Voltages are referenced to GND (ground = 0 V); for test circuit see Symbol Parameter Conditions propagation delay nA to nY; see enable time 1OE to 1Y; see 2OE to 2Y; see ...

Page 11

... NXP Semiconductors Table 8. Dynamic characteristics Voltages are referenced to GND (ground = 0 V); for test circuit see Symbol Parameter Conditions propagation delay nA to nY; see enable time 1OE to 1Y; see 2OE to 2Y; see ...

Page 12

... NXP Semiconductors Table 8. Dynamic characteristics Voltages are referenced to GND (ground = 0 V); for test circuit see Symbol Parameter Conditions propagation delay nA to nY; see enable time 1OE to 1Y; see 2OE to 2Y; see ...

Page 13

... NXP Semiconductors Table 8. Dynamic characteristics Voltages are referenced to GND (ground = 0 V); for test circuit see Symbol Parameter Conditions pF and power dissipation MHz capacitance [1] All typical values are measured at nominal V [ the same as t and t ...

Page 14

... NXP Semiconductors 1OE input output LOW-to-OFF OFF-to-LOW output HIGH-to-OFF OFF-to-HIGH Measurement points are given in Logic levels: V and Fig 8. 3-state enable and disable times 2OE input output LOW-to-OFF OFF-to-LOW output HIGH-to-OFF OFF-to-HIGH Measurement points are given in ...

Page 15

... NXP Semiconductors Test data is given in Table Definitions for test circuit Load resistance Load capacitance including jig and probe capacitance Termination resistance should be equal to the output impedance External voltage for measuring switching times. EXT Fig 10. Test circuit for measuring switching times Table 11 ...

Page 16

... NXP Semiconductors 13. Package outline VSSOP8: plastic very thin shrink small outline package; 8 leads; body width 2 pin 1 index 1 e DIMENSIONS (mm are the original dimensions UNIT max. 0.15 0. 0.12 0.00 0.60 Notes 1. Plastic or metal protrusions of 0.15 mm maximum per side are not included. ...

Page 17

... NXP Semiconductors XSON8: plastic extremely thin small outline package; no leads; 8 terminals; body 1 x 1. 8× (2) terminal 1 index area DIMENSIONS (mm are the original dimensions) ( UNIT b D max max 0.25 2.0 mm 0.5 0.04 0.17 1.9 Notes 1. Including plating thickness. 2. Can be visible in some manufacturing processes. ...

Page 18

... NXP Semiconductors XSON8: extremely thin small outline package; no leads; 8 terminals; body 1. 0.5 mm terminal 1 index area (2) (4× terminal 1 index area Dimensions (1) Unit max 0.5 0.04 0.20 1.40 mm nom 0.15 1.35 min 0.12 1.30 Note 1. Including plating thickness. 2. Visible depending upon used manufacturing technology. Outline version ...

Page 19

... NXP Semiconductors XSON8: plastic extremely thin small outline package; no leads; 8 terminals; body 0.5 mm terminal 1 index area Dimensions (mm are the original dimensions) (1) Unit max 0.05 0.35 2.1 mm nom 0.5 min 0.00 0.15 1.9 Outline version IEC SOT996-2 Fig 14. Package outline SOT996-2 (XSON8) 74AUP2G241 Product data sheet ...

Page 20

... NXP Semiconductors XQFN8: plastic, extremely thin quad flat package; no leads; 8 terminals; body 1.6 x 1 terminal 1 index area terminal 1 index area L 1 Dimensions (1) Unit max 0.5 0.05 0.25 1.65 mm nom 0.20 1.60 min 0.00 0.15 1.55 Note 1. Plastic or metal protrusions of 0.075 mm maximum per side are not included. Outline ...

Page 21

... NXP Semiconductors XSON8: extremely thin small outline package; no leads; 8 terminals; body 1.2 x 1 (2) (8×) terminal 1 index area Dimensions (1) Unit max 0.35 0.04 0.20 1.25 mm nom 0.15 1.20 min 0.12 1.15 Note 1. Including plating thickness. 2. Visible depending upon used manufacturing technology. Outline version IEC SOT1116 Fig 16. Package outline SOT1116 (XSON8) ...

Page 22

... NXP Semiconductors XSON8: extremely thin small outline package; no leads; 8 terminals; body 1.35 x 1 (2) (8×) terminal 1 index area Dimensions (1) Unit max 0.35 0.04 0.20 1.40 mm nom 0.15 1.35 min 0.12 1.30 Note 1. Including plating thickness. 2. Visible depending upon used manufacturing technology. Outline version IEC SOT1203 Fig 17. Package outline SOT1203 (XSON8) ...

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... NXP Semiconductors 14. Abbreviations Table 12. Abbreviations Acronym Description CDM Charged Device Model DUT Device Under Test ESD ElectroStatic Discharge HBM Human Body Model MM Machine Model 15. Revision history Table 13. Revision history Document ID Release date 74AUP2G241 v.7 20130211 • Modifications: For type number 74AUP2G241GD XSON8U has changed to XSON8. ...

Page 24

... Terms and conditions of commercial sale of NXP Semiconductors. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice ...

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... Product data sheet NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ ...

Page 26

... NXP Semiconductors 18. Contents 1 General description . . . . . . . . . . . . . . . . . . . . . . 1 2 Features and benefits . . . . . . . . . . . . . . . . . . . . 1 3 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 4 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 5 Functional diagram . . . . . . . . . . . . . . . . . . . . . . 3 6 Pinning information . . . . . . . . . . . . . . . . . . . . . . 3 6.1 Pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 6.2 Pin description . . . . . . . . . . . . . . . . . . . . . . . . . 4 7 Functional description . . . . . . . . . . . . . . . . . . . 4 8 Limiting values Recommended operating conditions Static characteristics Dynamic characteristics . . . . . . . . . . . . . . . . . . 9 12 Waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 13 Package outline ...

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