74AUP1G34GS,132 NXP Semiconductors, 74AUP1G34GS,132 Datasheet

no-image

74AUP1G34GS,132

Manufacturer Part Number
74AUP1G34GS,132
Description
Buffers & Line Drivers 4.6 V XSON6
Manufacturer
NXP Semiconductors
Datasheet

Specifications of 74AUP1G34GS,132

Rohs
yes
Supply Voltage - Max
4.6 V
Supply Voltage - Min
- 0.5 V
Maximum Operating Temperature
+ 125 C
Mounting Style
SMD/SMT
Package / Case
XSON-6
Factory Pack Quantity
5000
1. General description
2. Features and benefits
The 74AUP1G34 provides a low-power, low-voltage single buffer.
Schmitt trigger action at all inputs makes the circuit tolerant to slower input rise and fall
times across the entire V
This device ensures a very low static and dynamic power consumption across the entire
V
This device is fully specified for partial power-down applications using I
The I
the device when it is powered down.
CC
74AUP1G34
Low-power buffer
Rev. 6 — 28 June 2012
Wide supply voltage range from 0.8 V to 3.6 V
High noise immunity
Complies with JEDEC standards:
ESD protection:
Low static power consumption; I
Latch-up performance exceeds 100 mA per JESD 78 Class II
Inputs accept voltages up to 3.6 V
Low noise overshoot and undershoot < 10 % of V
I
Multiple package options
Specified from −40 °C to +85 °C and −40 °C to +125 °C
OFF
range from 0.8 V to 3.6 V.
OFF
JESD8-12 (0.8 V to 1.3 V)
JESD8-11 (0.9 V to 1.65 V)
JESD8-7 (1.2 V to 1.95 V)
JESD8-5 (1.8 V to 2.7 V)
JESD8-B (2.7 V to 3.6 V)
HBM JESD22-A114F Class 3A exceeds 5000 V
MM JESD22-A115-A exceeds 200 V
CDM JESD22-C101E exceeds 1000 V
circuitry provides partial power-down mode operation
circuitry disables the output, preventing the damaging backflow current through
CC
range from 0.8 V to 3.6 V.
CC
= 0.9 μA (maximum)
CC
Product data sheet
OFF
.

Related parts for 74AUP1G34GS,132

74AUP1G34GS,132 Summary of contents

Page 1

Low-power buffer Rev. 6 — 28 June 2012 1. General description The 74AUP1G34 provides a low-power, low-voltage single buffer. Schmitt trigger action at all inputs makes the circuit tolerant to slower input rise and fall times across the entire ...

Page 2

... NXP Semiconductors 3. Ordering information Table 1. Ordering information Type number Package Temperature range Name −40 °C to +125 °C 74AUP1G34GW −40 °C to +125 °C 74AUP1G34GM −40 °C to +125 °C 74AUP1G34GF −40 °C to +125 °C 74AUP1G34GN −40 °C to +125 °C 74AUP1G34GS −40 °C to +125 °C 74AUP1G34GX 4 ...

Page 3

... NXP Semiconductors 6. Pinning information 6.1 Pinning 74AUP1G34 1 n. GND 001aac535 Fig 4. Pin configuration SOT353-1 74AUP1G34 n. GND 3 Transparent top view Fig 6. Pin configuration SOT891, SOT1115 and SOT1202 6.2 Pin description Table 3. Pin description Symbol Pin TSSOP5 and X2SON5 XSON6 n. GND ...

Page 4

... NXP Semiconductors 7. Functional description [1] Table 4. Function table Input [ HIGH voltage level LOW voltage level. 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V). Symbol Parameter V supply voltage CC I input clamping current ...

Page 5

... NXP Semiconductors 10. Static characteristics Table 7. Static characteristics At recommended operating conditions; voltages are referenced to GND (ground = 0 V). Symbol Parameter = 25 °C T amb V HIGH-level input voltage IH V LOW-level input voltage IL V HIGH-level output voltage OH V LOW-level output voltage OL I input leakage current I I power-off leakage current OFF Δ ...

Page 6

... NXP Semiconductors Table 7. Static characteristics At recommended operating conditions; voltages are referenced to GND (ground = 0 V). Symbol Parameter = −40 °C to +85 °C T amb V HIGH-level input voltage IH V LOW-level input voltage IL V HIGH-level output voltage OH V LOW-level output voltage OL I input leakage current I I power-off leakage current OFF Δ ...

Page 7

... NXP Semiconductors Table 7. Static characteristics At recommended operating conditions; voltages are referenced to GND (ground = 0 V). Symbol Parameter = −40 °C to +125 °C T amb V HIGH-level input voltage IH V LOW-level input voltage IL V HIGH-level output voltage OH V LOW-level output voltage OL I input leakage current I I power-off leakage current OFF Δ ...

Page 8

... NXP Semiconductors 11. Dynamic characteristics Table 8. Dynamic characteristics Voltages are referenced to GND (ground = 0 V); for test circuit see Symbol Parameter Conditions propagation see pd delay propagation see pd delay propagation ...

Page 9

... NXP Semiconductors Table 8. Dynamic characteristics Voltages are referenced to GND (ground = 0 V); for test circuit see Symbol Parameter Conditions C power MHz dissipation V = GND capacitance [1] All typical values are measured at nominal V [ the same as t and t ...

Page 10

... NXP Semiconductors Test data is given in Table Definitions for test circuit Load resistance Load capacitance including jig and probe capacitance Termination resistance should be equal to the output impedance External voltage for measuring switching times. EXT Fig 9. Test circuit for measuring switching times Table 10 ...

Page 11

... NXP Semiconductors 13. Package outline TSSOP5: plastic thin shrink small outline package; 5 leads; body width 1. DIMENSIONS (mm are the original dimensions UNIT max. 0.1 1.0 mm 1.1 0.15 0 0.8 Note 1. Plastic or metal protrusions of 0.15 mm maximum per side are not included. OUTLINE ...

Page 12

... NXP Semiconductors XSON6: plastic extremely thin small outline package; no leads; 6 terminals; body 1 x 1. (2) terminal 1 index area Dimensions (mm are the original dimensions) (1) Unit max 0.5 0.04 0.25 1.50 mm nom 0.20 1.45 min 0.17 1.40 Notes 1. Including plating thickness. 2. Can be visible in some manufacturing processes. Outline version ...

Page 13

... NXP Semiconductors XSON6: plastic extremely thin small outline package; no leads; 6 terminals; body 0 6× (1) terminal 1 index area DIMENSIONS (mm are the original dimensions UNIT b D max max 0.20 1.05 mm 0.5 0.04 0.12 0.95 Note 1. Can be visible in some manufacturing processes. OUTLINE VERSION IEC SOT891 Fig 12. Package outline SOT891 (XSON6) ...

Page 14

... NXP Semiconductors XSON6: extremely thin small outline package; no leads; 6 terminals; body 0.9 x 1 terminal 1 index area Dimensions (1) Unit max 0.35 0.04 0.20 0.95 mm nom 0.15 0.90 min 0.12 0.85 Note 1. Including plating thickness. 2. Visible depending upon used manufacturing technology. Outline version IEC SOT1115 Fig 13. Package outline SOT1115 (XSON6) ...

Page 15

... NXP Semiconductors XSON6: extremely thin small outline package; no leads; 6 terminals; body 1.0 x 1 (6×) terminal 1 index area Dimensions (1) Unit max 0.35 0.04 0.20 1.05 mm nom 0.15 1.00 min 0.12 0.95 Note 1. Including plating thickness. 2. Visible depending upon used manufacturing technology. Outline version IEC SOT1202 Fig 14. Package outline SOT1202 (XSON6) ...

Page 16

... NXP Semiconductors X2SON5: plastic thermal enhanced extremely thin small outline package; no leads; 5 terminals; body 0.8 x 0 terminal 1 index area e 1 terminal 1 index area Dimensions (1) Unit max 0.35 0.04 0.85 0.128 nom 0.80 mm min 0.040 0.75 Note 1. Dimension A is including plating thickness. 2. Plastic or metal protrusions of 0.075 mm maximum per side are not included. ...

Page 17

... NXP Semiconductors 14. Abbreviations Table 11. Abbreviations Acronym Description CDM Charged Device Model DUT Device Under Test ESD ElectroStatic Discharge HBM Human Body Model MM Machine Model 15. Revision history Table 12. Revision history Document ID Release date 74AUP1G34 v.6 20120628 • Modifications: Added type number 74AUP1G34GX (SOT1226) • ...

Page 18

... Terms and conditions of commercial sale of NXP Semiconductors. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice ...

Page 19

... Product data sheet NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ ...

Page 20

... NXP Semiconductors 18. Contents 1 General description . . . . . . . . . . . . . . . . . . . . . . 1 2 Features and benefits . . . . . . . . . . . . . . . . . . . . 1 3 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 4 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 5 Functional diagram . . . . . . . . . . . . . . . . . . . . . . 2 6 Pinning information . . . . . . . . . . . . . . . . . . . . . . 3 6.1 Pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 6.2 Pin description . . . . . . . . . . . . . . . . . . . . . . . . . 3 7 Functional description . . . . . . . . . . . . . . . . . . . 4 8 Limiting values Recommended operating conditions Static characteristics Dynamic characteristics . . . . . . . . . . . . . . . . . . 8 12 Waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 13 Package outline ...

Related keywords