NTB0101GW,125 NXP Semiconductors, NTB0101GW,125 Datasheet - Page 16
NTB0101GW,125
Manufacturer Part Number
NTB0101GW,125
Description
Translation - Voltage Levels 5.9ns 5.5V 250mW
Manufacturer
NXP Semiconductors
Datasheet
1.NTB0101GW125.pdf
(26 pages)
Specifications of NTB0101GW,125
Rohs
yes
Propagation Delay Time
5.9 ns
Supply Voltage - Max
5.5 V
Supply Voltage - Min
1.2 V
Maximum Operating Temperature
+ 125 C
Package / Case
SC-88
Maximum Power Dissipation
250 mW
Minimum Operating Temperature
- 40 C
Factory Pack Quantity
3000
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
NTB0101GW,125
Manufacturer:
NXP/恩智浦
Quantity:
20 000
NXP Semiconductors
NTB0101
Product data sheet
Fig 9.
Architecture of NTB0101 I/O cell
13.2 Architecture
The architecture of the NTB0101 is shown in
extra input signal to control the direction of data flow from A to B or from B to A. In a static
state, the output drivers of the NTB0101 can maintain a defined output level, but the
output architecture is designed to be weak, so that they can be overdriven by an external
driver when data on the bus starts flowing in the opposite direction. The output of one-shot
circuits detect rising or falling edges on the A or B ports. During a rising edge, the
one-shot circuits turn on the PMOS transistors (T1, T3) for a short duration, accelerating
the LOW-to-HIGH transition. Similarly, during a falling edge, the one-shot circuits turn on
the NMOS transistors (T2, T4) for a short duration, accelerating the HIGH-to-LOW
transition. During output transitions the typical output impedance is 70 at V
to 1.8 V, 50 at V
A
V
CC(A)
All information provided in this document is subject to legal disclaimers.
Dual supply translating transceiver; auto direction sensing; 3-state
CCO
T3
T4
4 kΩ
= 1.8 V to 3.3 V and 40 at V
Rev. 4 — 6 August 2012
SHOT
SHOT
ONE
ONE
SHOT
SHOT
ONE
ONE
4 kΩ
T1
T2
Figure
V
CC(B)
001aal921
9. The device does not require an
CCO
B
= 3.3 V to 5.0 V.
NTB0101
© NXP B.V. 2012. All rights reserved.
CCO
= 1.2 V
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