74LVC2G08GS,115 NXP Semiconductors, 74LVC2G08GS,115 Datasheet - Page 8

• Manufacturer Part Number: 74LVC2G08GS,115
• Description: Translation - Voltage Levels 11.3ns 5.5V 300mW
• Manufacturer: NXP Semiconductors

Specifications of 74LVC2G08GS,115

• Rohs: yes
• Propagation Delay Time: 11.3 ns
• Supply Voltage - Max: 5.5 V
• Supply Voltage - Min: 1.65 V
• Maximum Operating Temperature: + 125 C
• Package / Case: XSON-8
• Maximum Power Dissipation: 300 mW
• Minimum Operating Temperature: - 40 C
• Factory Pack Quantity: 5000

NXP Semiconductors
Table 8.
Voltages are referenced to GND (ground = 0 V); for test circuit see
[1]
[2]
[3]
12. Waveforms
Table 9.
74LVC2G08
Product data sheet
Symbol Parameter
C
Supply voltage
V
1.65 V to 1.95 V
2.3 V to 2.7 V
2.7 V
3.0 V to 3.6 V
4.5 V to 5.5 V
Fig 8.
CC
PD
Typical values are measured at nominal V
t
C
P
f
f
C
V
N = number of inputs switching;
(C
pd
i
o
D
CC
PD
= input frequency in MHz;
L
= output frequency in MHz;
is the same as t
= output load capacitance in pF;
= C
L
is used to determine the dynamic power dissipation (P
= supply voltage in V;
 V
power dissipation
capacitance
Measurement points are given in
V
Input (nA, nB) to output (nY) propagation delays
PD
OL
Dynamic characteristics
Measurement points
CC
 V
2
and V
 f
CC
o
2
) = sum of outputs.
OH
 f
PLH
i
are typical output voltage levels that occur with the output load.
 N + (C
and t
PHL
Conditions
per gate; V
L
 V
CC
nA, nB input
nY output
2
…continued
 f
Table
I
CC
o
Input
V
0.5  V
0.5  V
1.5 V
1.5 V
0.5  V
All information provided in this document is subject to legal disclaimers.
= GND to V
) where:
M
and at T
9.
GND
V
V
OH
OL
V
CC
CC
CC
I
Rev. 12 — 2 April 2013
amb
CC
= 25 C.
D
in W).
V
M
V
[3]
M
t
PHL
Figure
Min
-
40 C to +85 C
9.
Typ
14.4
t
PLH
[1]
mna224
Output
V
0.5  V
0.5  V
1.5 V
1.5 V
0.5  V
M
Max
-
CC
CC
CC
40 C to +125 C Unit
74LVC2G08
Dual 2-input AND gate
Min
-
© NXP B.V. 2013. All rights reserved.
Max
-
pF
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