BGX7100HN/1,115 NXP Semiconductors, BGX7100HN/1,115 Datasheet - Page 28

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BGX7100HN/1,115

Manufacturer Part Number
BGX7100HN/1,115
Description
Modulator / Demodulator IQ MOD 5V 184mA
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BGX7100HN/1,115

Rohs
yes
Package / Case
HVQFN-24
Maximum Operating Temperature
+ 85 C
Minimum Operating Temperature
- 40 C
Modulation Type
Quadrature
Operating Supply Voltage
4.75 V to 5.25 V
Factory Pack Quantity
1500
Supply Current
184 mA
NXP Semiconductors
BGX7100
Product data sheet
Fig 50. N
RFoutput noise floor
(dBm/Hz)
(1) P
(2) P
(3) P
-150
-152
-154
-156
-158
-160
-30
f
RF
i(lo)
i(lo)
i(lo)
flr(o)
= 2140 MHz with 30 MHz offset
= 0 dBm.
= 3 dBm.
= +3 dBm.
versus P
-20
Parameters for the two following drawings: noise floor with baseband; V
T
MODI_N, MODI_P and MODQ_N; DC signal on MODQ_P; unless otherwise specified.
o
mb
at P
-10
= 25 C; P
i(lo)
= 0 dBm and
RF output power (dBm)
(1)
(2)
(3)
0
i(lo)
All information provided in this document is subject to legal disclaimers.
aaa-002849
= 0 dBm; input baseband ports terminated on short circuit to ground for
Rev. 5 — 3 September 2012
10
Fig 51. N
RFoutput noise floor
(1) RF = 1840 MHz.
(2) RF = 942.5 MHz.
(3) RF = 2140 MHz.
-152
(dBm/Hz)
-154
-156
-158
-160
-30
flr(o)
versus P
-20
(1)
(2)
(3)
o
at P
-10
i(lo)
Transmitter IQ modulator
= 0 dBm
RF output power (dBm)
BGX7100
0
© NXP B.V. 2012. All rights reserved.
CC
aaa-002850
= 5 V;
10
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