VNV10N07-E STMicroelectronics, VNV10N07-E Datasheet

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VNV10N07-E

Manufacturer Part Number
VNV10N07-E
Description
Power Switch ICs - Power Distribution N-Ch 70V 10A OmniFET
Manufacturer
STMicroelectronics
Datasheet

Specifications of VNV10N07-E

Product Category
Power Switch ICs - Power Distribution
Rohs
yes
Number Of Outputs
1
On Resistance (max)
100 mOhms
Operating Supply Voltage
18 V
Supply Current (max)
0.25 mA
Mounting Style
SMD/SMT
Package / Case
PowerSO-10
Maximum Power Dissipation
50000 mW
Output Current
7 A
Factory Pack Quantity
50

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
VNV10N07-E
Manufacturer:
ST
Quantity:
20 000
BLOCK DIAGRAM ( )
( ) PowerSO-10 Pin Configuration : INPUT = 6,7,8,9,10; SOURCE = 1,2,4,5; DRAIN = TAB
June 1998
DESCRIPTION
The VNB10N07, VNK10N07FM, VNP10N07FI
and VNV10N07 are monolithic devices made
using
Technology,
standard power MOSFETS in DC to 50 KHz
applications. Built-in thermal shut-down, linear
current limitation and overvoltage clamp protect
VNB10N07
VNK10N07FM
VNP10N07FI
VNV10N07
PIN
POWER MOSFET (ANALOG DRIVING)
MOSFET
LINEAR CURRENT LIMITATION
THERMAL SHUT DOWN
SHORT CIRCUIT PROTECTION
INTEGRATED CLAMP
LOW CURRENT DRAWN FROM INPUT PIN
DIAGNOSTIC FEEDBACK THROUGH INPUT
ESD PROTECTION
DIRECT ACCESS TO THE GATE OF THE
COMPATIBLE WITH STANDARD POWER
TYPE
STMicroelectronics
®
intended
V
70 V
70 V
70 V
70 V
clamp
FULLY AUTOPROTECTED POWER MOSFET
for
R
0.1
0.1
0.1
0.1
DS(on)
replacement
VIPower
10 A
10 A
10 A
10 A
I
lim
M0
of
VNP10N07FI/VNV10N07
the chip in harsh enviroments.
Fault feedback can be detected by monitoring the
voltage at the input pin.
VNB10N07/K10N07FM
ISOWATT220
D2PAK
TO-263
1
3
1
2
3
"OMNIFET":
SOT82-FM
PowerSO-10
10
1
1/14

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VNV10N07-E Summary of contents

Page 1

... ESD PROTECTION DIRECT ACCESS TO THE GATE OF THE POWER MOSFET (ANALOG DRIVING) COMPATIBLE WITH STANDARD POWER MOSFET DESCRIPTION The VNB10N07, VNK10N07FM, VNP10N07FI and VNV10N07 are monolithic devices made using STMicroelectronics Technology, intended for standard power MOSFETS KHz applications. Built-in thermal shut-down, linear ...

Page 2

... VNB10N07-VNK10N07FM-VNP10N07FI-VNV10N07 ABSOLUTE MAXIMUM RATING Symbol Parameter V Drain-source Voltage ( Input Voltage in I Drain Current D I Reverse DC Output Current R V Electrostatic Discharge (C= 100 pF, esd R=1 Total Dissipation at T tot T Operating Junction Temperature j T Case Operating Temperature c T Storage Temperature stg THERMAL DATA ...

Page 3

... Overtemperature jsh Shutdown Overtemperature Reset jrs Fault Sink Current Single Pulse as Avalanche Energy ( ) Pulsed: Pulse duration = 300 s, duty cycle 1 Parameters guaranteed by design/characterization VNB10N07-VNK10N07FM-VNP10N07FI-VNV10N07 Test Conditions VDS = MHz Test Conditions ...

Page 4

... VNB10N07-VNK10N07FM-VNP10N07FI-VNV10N07 PROTECTION FEATURES During normal operation, the Input pin is electrically connected to the gate of the internal power MOSFET. The device then behaves like a standard power MOSFET and can be used as a switch from KHz. The only difference from the user’s standpoint is that a small DC ...

Page 5

... Thermal Impedance For ISOWATT220 Derating Curve Transconductance VNB10N07-VNK10N07FM-VNP10N07FI-VNV10N07 Thermal Impedance For D2PAK / PowerSO-10 Output Characteristics Static Drain-Source On Resistance vs Input Voltage 5/14 ...

Page 6

... VNB10N07-VNK10N07FM-VNP10N07FI-VNV10N07 Static Drain-Source On Resistance Input Charge vs Input Voltage Normalized Input Threshold Voltage vs Temperature 6/14 Static Drain-Source On Resistance Capacitance Variations Normalized On Resistance vs Temperature ...

Page 7

... Normalized On Resistance vs Temperature Turn-on Current Slope Turn-off Drain-Source Voltage Slope VNB10N07-VNK10N07FM-VNP10N07FI-VNV10N07 Turn-on Current Slope Turn-off Drain-Source Voltage Slope Switching Time Resistive Load 7/14 ...

Page 8

... VNB10N07-VNK10N07FM-VNP10N07FI-VNV10N07 Switching Time Resistive Load Current Limit vs Junction Temperature Source Drain Diode Forward Characteristics 8/14 Switching Time Resistive Load Step Response Current Limit ...

Page 9

... Fig. 1: Unclamped Inductive Load Test Circuits Fig. 3: Switching Times Test Circuits For Resistive Load Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times VNB10N07-VNK10N07FM-VNP10N07FI-VNV10N07 Fig. 2: Unclamped Inductive Waveforms Fig. 4: Input Charge Test Circuit Fig. 6: Waveforms 9/14 ...

Page 10

... VNB10N07-VNK10N07FM-VNP10N07FI-VNV10N07 TO-263 (D2PAK) MECHANICAL DATA DIM. MIN. A 4.3 A1 2.49 B 0.7 B2 1.25 C 0.45 C2 1. 1. 10/14 mm TYP. MAX. MIN. 4.6 0.169 2.69 0.098 0.93 0.027 1.4 0.049 0.6 0.017 1.36 0.047 9.35 0.352 10.28 0.393 5.28 0.192 15.85 0.590 1.4 0.050 1.75 0.055 inch TYP. MAX. 0.181 0.106 0.036 0.055 0.023 ...

Page 11

... SOT82-FM MECHANICAL DATA DIM. MIN. TYP. A 2.85 A1 1.47 b 0.40 b1 1.4 b2 1.3 c 0.45 D 10.5 e 2.2 E 7.45 L 15.5 L1 1.95 VNB10N07-VNK10N07FM-VNP10N07FI-VNV10N07 mm MAX. MIN. 3.05 1.122 1.67 0.578 0.60 0.157 1.6 0.551 1.5 0.511 0.6 0.177 10.9 4.133 2.8 0.866 7.75 2.933 15.9 6.102 2.35 0.767 inch TYP. MAX. 1.200 0.657 0.236 0.630 0.590 0.236 4.291 1.102 3.051 6.260 0.925 P032R 11/14 ...

Page 12

... VNB10N07-VNK10N07FM-VNP10N07FI-VNV10N07 ISOWATT220 MECHANICAL DATA DIM. MIN. A 4.4 B 2.5 D 2.5 E 0.4 F 0.75 F1 1.15 F2 1.15 G 4. 28.6 L4 9 Ø 3 ¯ 12/14 mm TYP. MAX. MIN. 4.6 0.173 2.7 0.098 2.75 0.098 0.7 0.015 1 0.030 1.7 0.045 1.7 0.045 5.2 0.195 2.7 0.094 10.4 0.393 16 30.6 1.126 10.6 0.385 16.4 0.626 9.3 0.354 3.2 0.118 inch TYP. MAX. 0.181 0.106 ...

Page 13

... D 9.40 D1 7.40 E 9.30 E1 7.20 E2 7.20 E3 6.10 E4 5.90 e 1.27 F 1.25 H 13.80 h 0.50 L 1. VNB10N07-VNK10N07FM-VNP10N07FI-VNV10N07 mm MAX. MIN. 3.65 0.132 0.10 0.000 0.60 0.016 0.55 0.013 9.60 0.370 7.60 0.291 9.50 0.366 7.40 0.283 7.60 0.283 6.35 0.240 6.10 0.232 1.35 0.049 14.40 0.543 1.80 0.047 0. SEATING PLANE DETAIL "A" B ...

Page 14

... VNB10N07-VNK10N07FM-VNP10N07FI-VNV10N07 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice ...

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