VND5E008MYTR-E STMicroelectronics, VND5E008MYTR-E Datasheet - Page 9

• Manufacturer Part Number: VND5E008MYTR-E
• Description: Power Switch ICs - Power Distribution Double Ch High Side 41V 8mOhm 76A 2uA
• Manufacturer: STMicroelectronics

Specifications of VND5E008MYTR-E

• Product Category: Power Switch ICs - Power Distribution
• Rohs: yes

VND5E008MY-E
2.3
Electrical characteristics
8 V < V
Table 5.
1. PowerMOS leakage included.
2. For each channel.
Table 6.
V
R
(dV
(dV
Symbol
V
USDhyst
V
ON REV
Symbol
I
R
V
L(off)
clamp
W
USD
OUT
OUT
t
t
W
I
CC
ON
S
d(on)
d(off)
OFF
ON
/dt)
/dt)
CC
on
off
Operating supply voltage
Undervoltage shutdown
Undervoltage shutdown
hysteresis
On-state resistance
Reverse battery on-state
resistance
Clamp Voltage
Supply current
Off-state output current
< 28 V; -40 °C < T
Turn-on delay time
Turn-off delay time
Turn-on voltage slope
Turn-off voltage slope
Switching energy
losses during t
Switching energy
losses during t
Power section
Switching (V
Parameter
Parameter
won
woff
CC
j
= 13V; T
Doc ID 018699 Rev 3
< 150 °C, unless otherwise specified
(2)
I
I
I
V
I
Off-state; V
V
On-state; V
I
V
T
V
T
R
R
R
R
R
R
OUT
OUT
OUT
S
OUT
j
j
CC
IN
IN
IN
L
L
L
L
L
L
= 20 mA
= 25 °C
= 125 °C
= 2.2 Ω (see
= 2.2 Ω (see
= 2.2 Ω
= 2.2 Ω
= 2.2 Ω (see
= 2.2 Ω (see
= V
= V
= V
j
= -13 V; I
= 6 A; T
= 6 A; T
= 6A; V
= 0 A
= 25°C)
Test conditions
OUT
OUT
OUT
Test conditions
CC
CC
= V
= 0 V; V
= 0 V; V
CC
j
j
= 25 °C
= 150 °C
OUT
= 13 V; T
= 13 V; V
SENSE
= 5V; T
Figure
Figure
Figure
Figure
= -6 A; T
CC
CC
= V
= 13 V;
= 13 V;
j
7)
7)
7)
7)
= 25 °C
j
IN
= 25 °C;
CSD
= 5 V;
j
= 25 °C
= 0 V
Min.
—
—
—
—
—
—
Electrical specifications
Min. Typ. Max. Unit
4.5
41
Figure 20
Figure 21
0
Typ.
0.43
See
See
1.2
30
15
0.01
2
3.5
0.5
3.5
13
46
8
8
(1)
Max. Unit
5
4.5
6.5
—
—
—
—
—
—
28
15
11
52
3
5
(1)
V/µs
V/µs
mΩ
mΩ
mΩ
mΩ
mA
mJ
mJ
µA
µA
µA
µs
µs
9/35
V
V
V
V