MT48H4M16LFB4-75 IT:H TR Micron Technology Inc, MT48H4M16LFB4-75 IT:H TR Datasheet - Page 23

• Manufacturer Part Number: MT48H4M16LFB4-75 IT:H TR
• Description: IC SDRAM 64MBIT 133MHZ 54VFBGA
• Manufacturer: Micron Technology Inc

Specifications of MT48H4M16LFB4-75 IT:H TR

• Format - Memory: RAM
• Memory Type: Mobile SDRAM
• Memory Size: 64M (4M x 16)
• Speed: 133MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.9 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 54-VFBGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 557-1391-2

Figure 14:
Figure 15:
PDF: 09005aef8237ed98/Source: 09005aef8237ed68
64mb_x16_Mobile SDRAM_Y24L_2.fm - Rev. C 10/07 EN
READ-to-PRECHARGE
Terminating a READ Burst
Note:
Note:
Command
Command
Command
Command
Address
Address
Address
Address
CLK
CLK
CLK
CLK
DQM is LOW.
DQM is LOW.
DQ
DQ
DQ
DQ
Bank a,
Bank a,
T0
T0
T0
Bank,
T0
Col n
Col n
Col n
READ
READ
Bank,
READ
READ
Col n
CL = 2
CL = 2
CL = 3
CL = 3
T1
T1
T1
T1
NOP
NOP
NOP
NOP
T2
T2
T2
T2
NOP
NOP
NOP
NOP
D
D
OUT
OUT
n
n
T3
T3
T3
T3
Transitioning Data
NOP
NOP
NOP
NOP
23
n + 1
D
n + 1
D
D
D
OUT
OUT
n
OUT
OUT
n
Transitioning Data
PRECHARGE
PRECHARGE
TERMINATE
TERMINATE
(a or all)
(a or all)
T4
T4
T4
BURST
T4
BURST
Bank
Bank
X = 1 cycle
X = 1 cycle
n + 2
n + 2
D
D
n + 1
n + 1
D
D
OUT
OUT
OUT
OUT
Micron Technology, Inc., reserves the right to change products or specifications without notice.
X = 2 cycles
X = 2 cycles
T5
T5
T5
T5
NOP
NOP
NOP
NOP
n + 3
n + 2
n + 3
n + 2
D
D
D
D
OUT
OUT
OUT
OUT
64Mb: 4 Meg x 16 Mobile SDRAM
t RP
t RP
T6
T6
T6
T6
NOP
NOP
NOP
NOP
n + 3
n + 3
D
D
OUT
OUT
Don’t Care
Don’t Care
Bank a,
Bank a,
ACTIVE
ACTIVE
T7
T7
T7
NOP
Row
Row
©2006 Micron Technology, Inc. All rights reserved.
Operations