MT48H4M16LFB4-75 IT:H TR Micron Technology Inc, MT48H4M16LFB4-75 IT:H TR Datasheet - Page 58

• Manufacturer Part Number: MT48H4M16LFB4-75 IT:H TR
• Description: IC SDRAM 64MBIT 133MHZ 54VFBGA
• Manufacturer: Micron Technology Inc

Specifications of MT48H4M16LFB4-75 IT:H TR

• Format - Memory: RAM
• Memory Type: Mobile SDRAM
• Memory Size: 64M (4M x 16)
• Speed: 133MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.9 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 54-VFBGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 557-1391-2

Figure 45:
PDF: 09005aef8237ed98/Source: 09005aef8237ed68
64mb_x16_Mobile SDRAM_Y24L_2.fm - Rev. C 10/07 EN
A0–A9, A11
Command
BA0, BA1
DQM
A10
CLK
CKE
DQ
t CKS
t CMS
t AS
t AS
t AS
ACTIVE
Row
Row
Bank
T0
Single WRITE – Without Auto Precharge
t CKH
t CMH
t AH
t AH
t AH
Notes:
t RCD
t RAS
t RC
t CK
T1
NOP
1. For this example, the BL = 1, and the WRITE burst is followed by a “manual” PRECHARGE.
2. 15ns is required between <D
3. A8, A9, and A11 = “Don’t Care.”
4. PRECHARGE command not allowed or
Disable auto precharge
t CMS
t CL
t DS
Column m 3
Bank
WRITE
T2
D
IN
t CMH
t CH
t DH
m
t WR
2
NOP 4
T3
58
IN
NOP 4
T4
m> and the PRECHARGE command, regardless of frequency.
t
Micron Technology, Inc., reserves the right to change products or specifications without notice.
RAS would be violated.
Single bank
PRECHARGE
All banks
Bank
T5
64Mb: 4 Meg x 16 Mobile SDRAM
t RP
T6
NOP
©2006 Micron Technology, Inc. All rights reserved.
ACTIVE
Bank
Row
T7
Timing Diagrams
NOP
T8
Don’t Care