IS61WV25616BLL-10TL ISSI, Integrated Silicon Solution Inc, IS61WV25616BLL-10TL Datasheet - Page 4

• Manufacturer Part Number: IS61WV25616BLL-10TL
• Description: IC SRAM 4MBIT 10NS 44TSOP
• Manufacturer: ISSI, Integrated Silicon Solution Inc

Specifications of IS61WV25616BLL-10TL

• Format - Memory: RAM
• Memory Type: SRAM - Asynchronous
• Memory Size: 4M (256K x 16)
• Speed: 10ns
• Interface: Parallel
• Voltage - Supply: 2.4 V ~ 3.6 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 44-TSOP II
• Density: 4Mb
• Access Time (max): 10ns
• Sync/async: Asynchronous
• Architecture: Not Required
• Clock Freq (max): Not RequiredMHz
• Operating Supply Voltage (typ): 2.5/3.3V
• Address Bus: 18b
• Package Type: TSOP-II
• Operating Temp Range: 0C to 70C
• Number Of Ports: 1
• Supply Current: 35mA
• Operating Supply Voltage (min): 2.4V
• Operating Supply Voltage (max): 3.6V
• Operating Temperature Classification: Commercial
• Mounting: Surface Mount
• Pin Count: 44
• Word Size: 16b
• Number Of Words: 256K
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 706-1105; IS61WV25616BLL-10TL

IS61WV25616ALL/ALS, IS61WV25616BLL/BLS,
IS64WV25616BLL/BLS
DC ELECTRICAL CHARACTERISTICS
V
DC ELECTRICAL CHARACTERISTICS
V
DC ELECTRICAL CHARACTERISTICS
V
4
DD
DD
DD
Symbol
V
V
V
V
I
I
Note:
1. V
Symbol
V
V
V
V
I
I
Note:
1. V
Symbol
V
V
V
V
I
I
Note:
1. V
LI
LO
LI
LO
LI
LO
OH
OL
IH
IL
OH
OL
IH
IL
OH
OL
IH
IL (1)
= 3.3V + 5%
= 2.4V-3.6V
= 1.65V-2.2V
V
V
V
IL
IH
IH
IH
IL
IL
(min.) = –0.3V DC; V
(min.) = –0.3V DC; V
(min.) = –0.3V DC; V
(max.) = V
(max.) = V
(max.) = V
Parameter
Output HIGH Voltage
Output LOW Voltage
Input HIGH Voltage
Input LOW Voltage
Input Leakage
Output Leakage
Parameter
Output HIGH Voltage
Output LOW Voltage
Input HIGH Voltage
Input LOW Voltage
Input Leakage
Output Leakage
Parameter
Output HIGH Voltage
Output LOW Voltage
Input HIGH Voltage
Input LOW Voltage
Input Leakage
Output Leakage
DD
DD
DD
+ 0.3V DC; V
+ 0.3V DC; V
+ 0.3V DC; V
IL
IL
IL
(min.) = –2.0V AC (pulse width < 10 ns). Not 100% tested.
(min.) = –2.0V AC (pulse width < 10 ns). Not 100% tested.
(min.) = –2.0V AC (pulse width < 10 ns). Not 100% tested.
(1)
(1)
IH
IH
IH
(max.) = V
(max.) = V
(max.) = V
Test Conditions
I
I
GND ≤ V
GND ≤ V
OH
OL
Test Conditions
V
V
GND ≤ V
GND ≤ V
Test Conditions
V
V
GND ≤ V
GND ≤ V
DD
DD
= 0.1 mA
DD
= -0.1 mA
DD
DD
DD
DD
+ 2.0V AC (pulse width < 10 ns). Not 100% tested.
+ 2.0V AC (pulse width < 10 ns). Not 100% tested.
+ 2.0V AC (pulse width < 10 ns). Not 100% tested.
= Min., I
= Min., I
= Min., I
= Min., I
(Over Operating Range)
(Over Operating Range)
(Over Operating Range)
OUT
IN
IN
OUT
≤ V
OUT
IN
≤ V
≤ V
≤ V
OH
≤ V
OH
OL
OL
DD
≤ V
DD
DD
= 8.0 mA
= 1.0 mA
DD
= –4.0 mA
= –1.0 mA
DD
, Outputs Disabled
DD
, Outputs Disabled
, Outputs Disabled
1.65-2.2V
1.65-2.2V
1.65-2.2V
1.65-2.2V
Integrated Silicon Solution, Inc. — www.issi.com
V
DD
Min.
–0.2
1.4
1.4
–1
–1
—
Min.
Min.
–0.3
–0.3
2.4
1.8
2.0
–1
–1
–1
–1
—
—
2
V
DD
Max.
V
V
0.2
0.4
—
1
1
DD
DD
+ 0.2
Max.
Max.
0.4
0.8
0.4
0.8
—
—
1
1
1
1
+ 0.3
+ 0.3
07/15/2010
Unit
Unit
Unit
µA
µA
µA
µA
µA
µA
Rev. G
V
V
V
V
V
V
V
V
V
V
V
V