MT48LC16M16A2TG-7E:D TR Micron Technology Inc, MT48LC16M16A2TG-7E:D TR Datasheet - Page 79

• Manufacturer Part Number: MT48LC16M16A2TG-7E:D TR
• Description: IC SDRAM 256MBIT 133MHZ 54TSOP
• Manufacturer: Micron Technology Inc
• Type: SDRAMr

Specifications of MT48LC16M16A2TG-7E:D TR

• Format - Memory: RAM
• Memory Type: SDRAM
• Memory Size: 256M (16Mx16)
• Speed: 133MHz
• Interface: Parallel
• Voltage - Supply: 3 V ~ 3.6 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 54-TSOP II
• Organization: 16Mx16
• Density: 256Mb
• Address Bus: 15b
• Access Time (max): 5.4ns
• Maximum Clock Rate: 143MHz
• Operating Supply Voltage (typ): 3.3V
• Package Type: TSOP-II
• Operating Temp Range: 0C to 70C
• Operating Supply Voltage (max): 3.6V
• Operating Supply Voltage (min): 3V
• Supply Current: 135mA
• Pin Count: 54
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: 557-1065-2

Command
Figure 49: Single WRITE With Auto Precharge
PDF: 09005aef8091e6d1
256Mb_sdr.pdf - Rev. N 1/10 EN
BA0, BA1
Address
DQM
CKE
A10
CLK
DQ
t CMS
t CKS
t AS
t AS
t AS
ACTIVE
Row
Row
Bank
T0
t CKH
t CMH
t AH
t AH
t AH
t RCD
t RAS
t RC
t CK
Note:
T1
NOP
1. For this example, BL = 1.
Enable auto precharge
t CMS
t CL
t DS
Column m
Bank
WRITE
T2
D
t CMH
IN
t DH
t CH
T3
NOP
t WR
79
T4
NOP
Micron Technology, Inc. reserves the right to change products or specifications without notice.
T5
NOP
256Mb: x4, x8, x16 SDRAM
t RP
NOP
T6
PRECHARGE Operation
© 1999 Micron Technology, Inc. All rights reserved.
ACTIVE
Bank
Row
Row
T7
NOP
T8
Don’t Care