IS43R16160B-6TL ISSI, Integrated Silicon Solution Inc, IS43R16160B-6TL Datasheet - Page 24

IC DDR SDRAM 256MBIT 66TSOP

IS43R16160B-6TL

Manufacturer Part Number
IS43R16160B-6TL
Description
IC DDR SDRAM 256MBIT 66TSOP
Manufacturer
ISSI, Integrated Silicon Solution Inc
Datasheet

Specifications of IS43R16160B-6TL

Package / Case
66-TSOPII
Memory Size
256M (16Mx16)
Format - Memory
RAM
Memory Type
DDR SDRAM
Speed
166MHz
Interface
Parallel
Voltage - Supply
2.5 V ~ 2.7 V
Operating Temperature
0°C ~ 70°C
Data Bus Width
16 bit
Maximum Clock Frequency
167 MHz
Access Time
0.7 ns
Supply Voltage (max)
2.7 V
Supply Voltage (min)
2.3 V
Maximum Operating Current
250 mA
Maximum Operating Temperature
+ 70 C
Minimum Operating Temperature
0 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
706-1086
IS43R16160B-6TL

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IS43R16160B-6TL
Manufacturer:
ISSI
Quantity:
8 000
Part Number:
IS43R16160B-6TL
Manufacturer:
ISSI
Quantity:
20 000
Part Number:
IS43R16160B-6TLI
Manufacturer:
TEMIC
Quantity:
782
Part Number:
IS43R16160B-6TLI
Manufacturer:
ISSI
Quantity:
20 000
IS43R83200B
IS43R16160B, IC43R16160B
24
DDR SDRAM (Rev.1.1)
I
I
OPERATIONAL DESCRIPTION
BANK ACTIVATE
the bank addresses (BA0,1). A row is indicated by the row address A0-12. The minimum activation
interval between one bank and the other bank is tRRD.
PRECHARGE
precharge all command (PREA,PRE+A10=H) is available to deactivate them at the same time. After
tRP from the precharge, an ACT command to the same bank can be issued.
The DDR SDRAM has four independent banks. Each bank is activated by the ACT command with
The PRE command deactivates the bank indicated by BA0,1. When multiple banks are active, the
Command
A0-9,11,12
A precharge command can be issued at BL/2 from a read command without data loss.
BA0,1
/CLK
DQS
CLK
A10
DQ
Preliminary
Preliminary
2 ACT command / tRCmin
ACT
Xa
Xa
00
tRRD
Bank Activation and Precharge All (BL=8, CL=2)
tRCD
ACT
01
Xb
Xb
READ
Y
0
00
tRCmin
256M Double Data Rate Synchronous DRAM
BL/2
tRAS
Qa0
Qa1
Qa2
Precharge all
Qa3
PRE
1
Qa4
Zentel Electronics Corporation
Qa5
tRP
Qa6
A3S56D30/40ETP
Integrated Silicon Solution, Inc.
Qa7
ACT
Xb
Xb
01
10/31/08
Rev. B

Related parts for IS43R16160B-6TL