IS42S16800E-7TL ISSI, Integrated Silicon Solution Inc, IS42S16800E-7TL Datasheet - Page 56

• Manufacturer Part Number: IS42S16800E-7TL
• Description: IC SDRAM 128MBIT 143MHZ 54TSOP
• Manufacturer: ISSI, Integrated Silicon Solution Inc
• Type: SDRAMr

Specifications of IS42S16800E-7TL

• Package / Case: 54-TSOP II
• Memory Size: 128M (8Mx16)
• Format - Memory: RAM
• Memory Type: SDRAM
• Speed: 143MHz
• Interface: Parallel
• Voltage - Supply: 3 V ~ 3.6 V
• Operating Temperature: 0°C ~ 70°C
• Data Bus Width: 8 bit
• Organization: 8 Mbit x 16
• Maximum Clock Frequency: 143 MHz
• Access Time: 7 ns
• Supply Voltage (max): 3.6 V
• Supply Voltage (min): 3 V
• Maximum Operating Current: 120 mA
• Maximum Operating Temperature: + 70 C
• Minimum Operating Temperature: 0 C
• Mounting Style: SMD/SMT
• Density: 128Mb
• Address Bus: 14b
• Access Time (max): 6.5/5.4ns
• Maximum Clock Rate: 143MHz
• Operating Supply Voltage (typ): 3.3V
• Package Type: TSOP-II
• Operating Temp Range: 0C to 70C
• Operating Supply Voltage (max): 3.6V
• Operating Supply Voltage (min): 3V
• Supply Current: 130mA
• Pin Count: 54
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 706-1064; IS42S16800E-7TL

IS42S81600E, IS42S16800E
SINGLE WRITE - WITHOUT AUTO PRECHARGE
Notes:
1) Burst Length = 1
2) x16: A9 and A11 = "Don't Care"
3) t
56
DQM/DQML
COMMAND
A0-A9, A11
x8: A11 = "Don't Care"
BA0, BA1
ras
DQMH
must not be violated.
CKE
CLK
A10
DQ
t
t
CKS
CMS
t
t
t
AS
AS
AS
BANK
ACTIVE
ROW
ROW
T0
t
CKH
t
t
t
t
CMH
AH
AH
AH
t
t
t
RCD
RAS
RC
t
CK
T1
NOP
DISABLE AUTO PRECHARGE
t
t
CMS
CL
t
DS
COLUMN m
WRITE
D
BANK
T2
IN
t
CMH
t
t
DH
CH
m
(2)
T3
NOP
t
DPL (3)
T4
NOP
Integrated Silicon Solution, Inc. — www.issi.com
SINGLE BANK
ALL BANKS
PRECHARGE
BANK
T5
ROW
t
T6
RP
NOP
ROW
ACTIVE
BANK
T7
DON'T CARE
T8
NOP
03/16/2011
Rev. D