IS62WV51216BLL-55TI ISSI, IS62WV51216BLL-55TI Datasheet - Page 4

• Manufacturer Part Number: IS62WV51216BLL-55TI
• Description: SRAM 8Mb 512Kx16 55ns 2.5v/3.6v
• Manufacturer: ISSI
• Type: Asynchronousr

Specifications of IS62WV51216BLL-55TI

• Product Category: SRAM
• Memory Size: 8 Mbit
• Organization: 512 K x 16
• Access Time: 55 ns
• Supply Voltage - Max: 3.6 V
• Supply Voltage - Min: 2.5 V
• Maximum Operating Current: 5 mA
• Maximum Operating Temperature: + 85 C
• Minimum Operating Temperature: - 40 C
• Mounting Style: SMD/SMT
• Package / Case: TSOP-44
• Interface: TTL
• Factory Pack Quantity: 135

IS62WV51216ALL,
ABSOLUTE MAXIMUM RATINGS
Note:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the
DC ELECTRICAL CHARACTERISTICS
Notes:
1. V
4
Symbol
V
T
V
T
P
device. This is a stress rating only and functional operation of the device at these or any other conditions above
those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect reliability.
Symbol
V
V
V
V
I
I
LO
LI
STG
IL
TERM
BIAS
DD
T
OH
OL
IH
IL (1)
(min.) = –1.0V for pulse width less than 10 ns.
Parameter
Output HIGH Voltage
Output LOW Voltage
Input HIGH Voltage
Input LOW Voltage
Input Leakage
Output Leakage
Parameter
Terminal Voltage with Respect to GND
Temperature Under Bias
V
Storage Temperature
Power Dissipation
DD
Related to GND
IS62WV51216BLL
Test Conditions
I
I
I
I
GND ≤ V
GND ≤ V
OH
OH
OL
OL
(1)
= 0.1 mA
= 2.1 mA
= -0.1 mA
= -1 mA
Integrated Silicon Solution, Inc. — www.issi.com —
(Over Operating Range)
OUT
IN
≤ V
≤ V
DD
DD
, Outputs Disabled
1.65-2.2V
1.65-2.2V
1.65-2.2V
1.65-2.2V
2.5-3.6V
2.5-3.6V
2.5-3.6V
2.5-3.6V
–0.2 to V
V
–0.2 to +3.8
–65 to +150
DD
–40 to +85
Value
1.0
DD
+0.3
Min.
–0.2
–0.2
1.4
2.2
1.4
2.2
–1
–1
—
—
Unit
V
V
°C
°C
W
V
V
DD
DD
Max.
0.2
0.4
0.4
0.6
—
—
1
1
+ 0.2
+ 0.3
1-800-379-4774
12/13/2007
Unit
µA
µA
Rev. D
V
V
V
V
V
V
V
V