M95128-RDW6TP STMicroelectronics, M95128-RDW6TP Datasheet - Page 42

• Manufacturer Part Number: M95128-RDW6TP
• Description: IC EEPROM 128KBIT 2MHZ 8TSSOP
• Manufacturer: STMicroelectronics

Specifications of M95128-RDW6TP

• Format - Memory: EEPROMs - Serial
• Memory Type: EEPROM
• Memory Size: 128K (16K x 8)
• Speed: 2MHz
• Interface: SPI, 3-Wire Serial
• Voltage - Supply: 1.8 V ~ 5.5 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 8-TSSOP
• Density: 128Kb
• Interface Type: Serial (SPI)
• Organization: 16Kx8
• Access Time (max): 150ns
• Frequency (max): 2MHz
• Write Protection: Yes
• Data Retention: 40Year
• Operating Supply Voltage (typ): 2.5/3.3/5V
• Package Type: TSSOP
• Operating Temp Range: -40C to 85C
• Supply Current: 3mA
• Operating Supply Voltage (min): 1.8V
• Operating Supply Voltage (max): 5.5V
• Operating Temperature Classification: Industrial
• Mounting: Surface Mount
• Pin Count: 8
• Maximum Clock Frequency: 2 MHz
• Access Time: 150 ns
• Supply Voltage (max): 5.5 V
• Supply Voltage (min): 1.8 V
• Maximum Operating Current: 3 mA
• Maximum Operating Temperature: + 85 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 40 C
• Operating Supply Voltage: 2.5 V, 3.3 V, 5 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-8684-2; M95128-RDW6TP

Revision history
42/44
Table 25.
27-Jun-2006
15-Jan-2008
13-Apr-2006
04-Oct-2007
Date
Document revision history (continued)
Revision
6
7
8
9
New M95128 datasheet extracted from the M95128/256 datasheet. Order
of sections modified.
ECC (error correction code) and Write cycling
Section 3.8: Supply voltage (V
Section 4: Operating
Power up state removed below
Figure 13: SPI modes supported
I
Table 14
I
t
Figure 16: Hold timing
Process
scheme.
“AC Characteristics (M95128, Device Grade
frequency) removed.
Note 1 removed from
T
PDIP8 (BN) and SO8 wide (MW) packages removed. M95128-W and
M95128-R are no longer under development.
Test conditions changed for V
characteristics (M95128-W, device grade
Figure 12: Bus master and memory devices on the SPI bus
SO8N package specifications updated (see
V Process specified and A Process replaced by P in
information
Section 3.8: Supply voltage (V
protocol
Write to Memory Array (WRITE)
code) and Write cycling
Note removed below
SPI
Test conditions modified for I
(M95128-R). AC characteristics values added for f
Table 16: AC characteristics (M95128, device grade
t
Section 10: Package mechanical
– UFDFPN8 package added
– Package mechanical inch values calculated from mm and rounded to 4
Table 24: Available M95128x products (package, voltage range,
temperature grade)
Blank removed below Plating technology, first note removed, process A
added and process V removed in
Section 3.7: V
Power-down
cycling
V
Table 24: Available M95128x products (package, voltage range,
temperature grade)
CC1
CC
CHHL
W
A
IL
decimal digits
modified in
added to
and V
specified over the whole V
bus, replaced by paragraph.
specified over the whole V
and t
Doc ID 5798 Rev 13
modified.
control,
letter and
and
IH
CHHH
scheme.
modified in
Table 6: Absolute maximum
and
Table
SS
Table 19: AC characteristics
Section 5.4: Write Status Register
ground
replaced by t
Section 5.6.1: ECC (error correction code) and Write
Note 1
15.
added.
updated.
features.
Figure 12: Bus master and memory devices on the
Table 19: AC characteristics
modified.
Table 15: DC characteristics
updated.
added.
added to
CC1
OL
CLHL
CC
CC
CC
CC
Section 6: Delivery
Section 3.8.2: Device
Changes
and V
and
)
),
and I
modified and
range in
data:
Table 23: Ordering information
added and information removed below
range and I
Section 4.3: Data Protection and
and t
Table 23: Ordering information
Section 5.6.1: ECC (error correction
CC0
OH
M95128, M95128-W, M95128-R
CLHH
ratings.
3).
in
in
Table
(M95128-R).
Table 20
Section Table 14.: DC
Table 15: DC characteristics
6)” Table (for 10MHz
, respectively.
CC0
paragraph added.
Note 2
13.
C
added to
(M95128-R).
state.
frequency = 10 MHz in
(WRSR),
3).
(M95128-R).
Table 23: Ordering
and
reset,
added.
Figure
Table
Section 3.8.4:
modified.
Section 5.6:
18).
scheme.
13,