NAND128W3A2BN6E NUMONYX, NAND128W3A2BN6E Datasheet - Page 37

IC FLASH 128MBIT 48TSOP

NAND128W3A2BN6E

Manufacturer Part Number
NAND128W3A2BN6E
Description
IC FLASH 128MBIT 48TSOP
Manufacturer
NUMONYX
Datasheets

Specifications of NAND128W3A2BN6E

Format - Memory
FLASH
Memory Type
FLASH - Nand
Memory Size
128M (16M x 8)
Interface
Parallel
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
48-TSOP
Access Time
12µs
Supply Voltage Range
2.7V To 3.6V
Memory Case Style
TSOP
No. Of Pins
48
Operating Temperature Range
-40°C To +85°C
Voltage, Vcc
3.3V
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Speed
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
497-5037
497-5037

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NAND128-A, NAND256-A
9
Maximum ratings
Stressing the device above the ratings listed in
cause permanent damage to the device. These are stress ratings only and operation of the
device at these or any other conditions above those indicated in the operating sections of
this specification is not implied. Exposure to absolute maximum ratings conditions for
extended periods may affect device reliability.
Table 15.
1. Compatibility with lead-free soldering processes in accordance with RoHS specifications. Not exceeding
2. Minimum voltage may undershoot to –2 V for less than 20 ns during transitions on input and I/O pins.
250 °C for more than 10 s, and peaking at 260 °C.
Maximum voltage may overshoot to V
Symbol
T
V
T
T
V
LEAD
BIAS
IO
STG
DD
(2)
Absolute maximum ratings
Temperature under bias
Storage temperature
Lead temperature during soldering
Input or output voltage
Supply voltage
Parameter
DD
+ 2 V for less than 20 ns during transitions on I/O pins.
(1)
Table 15: Absolute maximum ratings
– 0.6
– 0.6
– 50
– 65
Min
Value
Max
Maximum ratings
125
150
260
4.6
4.6
may
Unit
°C
°C
°C
V
V
37/59

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