S9S08SG8E2VTJR Freescale Semiconductor, S9S08SG8E2VTJR Datasheet - Page 57

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S9S08SG8E2VTJR

Manufacturer Part Number
S9S08SG8E2VTJR
Description
8-bit Microcontrollers - MCU 9S08 UC W/ 8K 0.25UM SGF
Manufacturer
Freescale Semiconductor
Datasheet

Specifications of S9S08SG8E2VTJR

Rohs
yes
Core
HCS08
Data Bus Width
8 bit
Maximum Clock Frequency
40 MHz
Program Memory Size
8 KB
Data Ram Size
512 B
On-chip Adc
Yes
Operating Temperature Range
- 40 C to + 85 C
Package / Case
TSSOP-20
Mounting Style
SMD/SMT
A/d Bit Size
10 bit
A/d Channels Available
12
Interface Type
I2C, SCI, SPI
Maximum Operating Temperature
+ 125 C
Minimum Operating Temperature
- 40 C
Number Of Programmable I/os
16
Number Of Timers
3
Program Memory Type
Flash
Supply Voltage - Max
5.5 V
Supply Voltage - Min
2.7 V

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
S9S08SG8E2VTJR
Manufacturer:
FREESCALE
Quantity:
20 000
4.5.4
The burst program command is used to program sequential bytes of data in less time than would be
required using the standard program command. This is possible because the high voltage to the FLASH
array does not need to be disabled between program operations. Ordinarily, when a program or erase
command is issued, an internal charge pump associated with the FLASH memory must be enabled to
supply high voltage to the array. Upon completion of the command, the charge pump is turned off. When
a burst program command is issued, the charge pump is enabled and then remains enabled after completion
of the burst program operation if these two conditions are met:
Freescale Semiconductor
The next burst program command has been queued before the current program operation has
completed.
The next sequential address selects a byte on the same physical row as the current byte being
programmed. A row of FLASH memory consists of 64 bytes. A byte within a row is selected by
addresses A5 through A0. A new row begins when addresses A5 through A0 are all zero.
Burst Program Execution
FLASH PROGRAM AND
ERASE FLOW
Figure 4-2. FLASH Program and Erase Flowchart
0
TO BUFFER ADDRESS AND DATA
MC9S08SG32 Data Sheet, Rev. 8
WRITE COMMAND TO FCMD
AND CLEAR FCBEF (Note 2)
WRITE TO FCDIV (Note 1)
TO LAUNCH COMMAND
WRITE 1 TO FCBEF
WRITE TO FLASH
CLEAR ERROR
FACCERR ?
FPVIOL OR
FACCERR ?
FCCF ?
START
DONE
1
NO
1
YES
0
Note 2: Wait at least four bus cycles
Note 1: Required only once after reset.
ERROR EXIT
before checking FCBEF or FCCF.
Chapter 4 Memory
51

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