STTH200W06TV1 STMicroelectronics, STTH200W06TV1 Datasheet - Page 4

• Manufacturer Part Number: STTH200W06TV1
• Description: Diodes - General Purpose, Power, Switching Turbo 2 ultrafast 2x100A 600V 1.0VF
• Manufacturer: STMicroelectronics

Specifications of STTH200W06TV1

• Rohs: yes
• Product: Switching Diodes
• Peak Reverse Voltage: 600 V
• Forward Continuous Current: 200 A
• Max Surge Current: 800 A
• Recovery Time: 2000 ns
• Forward Voltage Drop: 1.25 V
• Maximum Reverse Leakage Current: 300 uA
• Mounting Style: SMD/SMT
• Package / Case: ISOTOP
• Maximum Operating Temperature: + 150 C

Characteristics
4/9
Figure 5.
Figure 7.
Figure 9.
12
10
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
350
300
250
200
150
100
8
6
4
2
0
50
100
0
0
0
T
I
j
=125 °C
V
T
F
=I
I
j
R
=125 °C
50
F
150
=400 V
50
=I
F(AV)
F(AV)
100
Reverse recovery time versus dI
(typical values, per diode)
100
Reverse recovery softness factor
versus dI
diode)
Transient peak forward voltage
versus dI
diode)
200
150
150
250
200
200
F
F
/dt (typical values, per
/dt (typical values, per
250
300
250
300
300
350
350
350
dI
400
dI
F
dI
F
/dt(A/µs)
400
400
/dt(A/µs)
F
V
T j = 125 ° C
/dt(A/µs)
I
R
F
= I
= 400 V
450
Doc ID 023612 Rev 1
450
F(AV)
450
500
500
F
500
/dt
Figure 6.
Figure 8.
Figure 10. Forward recovery time versus dI
1200
1000
2.0
1.5
1.0
0.5
0.0
800
600
400
200
9000
8000
7000
6000
5000
4000
3000
2000
1000
0
25
100
0
0
S
FR
Q
FACTOR
I
RM
RR
V
T
I
j
R
=125 °C
F
=400 V
=I
50
150
F(AV)
Reverse recovery charges versus
dI
Relative variation of dynamic
parameters versus junction
temperature
(typical values, per diode)
100
F
50
200
/dt (typical values, per diode)
150
250
200
75
250
300
300
350
STTH200W06TV1
350
dI
Reference: T
100
F
400
/dt(A/µs)
V
dI
400
FR
T j = 125 ° C
I
V
F
F
I
R
F
/dt(A/µs)
= I
= 2.5 V
=400 V
=I
F(AV)
F(AV)
450
j
450
=125 °C
T
j
(°C)
500
F
125
/dt
500