CY7C1041D-10ZSXI Cypress Semiconductor Corp, CY7C1041D-10ZSXI Datasheet - Page 5
![IC SRAM 4MBIT 10NS 44TSOP](/photos/7/23/72387/428-44-tsop_sml.jpg)
CY7C1041D-10ZSXI
Manufacturer Part Number
CY7C1041D-10ZSXI
Description
IC SRAM 4MBIT 10NS 44TSOP
Manufacturer
Cypress Semiconductor Corp
Type
Asynchronousr
Datasheet
1.CY7C1041D-10ZSXI.pdf
(11 pages)
Specifications of CY7C1041D-10ZSXI
Memory Size
4M (256K x 16)
Package / Case
44-TSOP II
Interface
Parallel
Format - Memory
RAM
Memory Type
SRAM - Asynchronous
Speed
10ns
Voltage - Supply
4.5 V ~ 5.5 V
Operating Temperature
-40°C ~ 85°C
Access Time
10 ns
Supply Voltage (max)
5.5 V
Supply Voltage (min)
4.5 V
Maximum Operating Current
90 mA
Organization
256 K x 16
Maximum Operating Temperature
+ 85 C
Minimum Operating Temperature
- 40 C
Mounting Style
SMD/SMT
Number Of Ports
1
Operating Supply Voltage
5 V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
428-1923
CY7C1041D-10ZSXI
CY7C1041D-10ZSXI
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
CY7C1041D-10ZSXI
Manufacturer:
SANYO
Quantity:
67
Company:
Part Number:
CY7C1041D-10ZSXI
Manufacturer:
CYPRESS
Quantity:
6 100
Part Number:
CY7C1041D-10ZSXI
Manufacturer:
CYPRESS
Quantity:
20 000
Document #: 38-05472 Rev. *E
Switching Waveforms
Read Cycle No. 2 (OE Controlled)
Write Cycle No. 1 (CE Controlled)
Notes:
15. WE is HIGH for read cycle.
16. Address valid prior to or coincident with CE transition LOW
17. Data I/O is high impedance if OE or BHE and/or BLE= V
18. If CE goes HIGH simultaneously with WE going HIGH, the output remains in a high-impedance state.
DATA OUT
CURRENT
ADDRESS
BHE, BLE
SUPPLY
BHE, BLE
V
DATAI/O
ADDRESS
CC
OE
CE
CE
WE
HIGH IMPEDANCE
t
t
(continued)
LZCE
PU
t
SA
[17, 18]
[15,16]
t
ACE
t
t
LZBE
t
DBE
LZOE
t
DOE
50%
IH
.
t
AW
t
RC
t
WC
t
SCE
t
PWE
t
BW
DATA VALID
t
SD
t
t
HZOE
HD
t
t
t
HZCE
HA
HZBE
t
PD
CY7C1041D
50%
IMPEDANCE
HIGH
Page 5 of 11
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