CY7C1041D-10ZSXI Cypress Semiconductor Corp, CY7C1041D-10ZSXI Datasheet - Page 6
![IC SRAM 4MBIT 10NS 44TSOP](/photos/7/23/72387/428-44-tsop_sml.jpg)
CY7C1041D-10ZSXI
Manufacturer Part Number
CY7C1041D-10ZSXI
Description
IC SRAM 4MBIT 10NS 44TSOP
Manufacturer
Cypress Semiconductor Corp
Type
Asynchronousr
Datasheet
1.CY7C1041D-10ZSXI.pdf
(11 pages)
Specifications of CY7C1041D-10ZSXI
Memory Size
4M (256K x 16)
Package / Case
44-TSOP II
Interface
Parallel
Format - Memory
RAM
Memory Type
SRAM - Asynchronous
Speed
10ns
Voltage - Supply
4.5 V ~ 5.5 V
Operating Temperature
-40°C ~ 85°C
Access Time
10 ns
Supply Voltage (max)
5.5 V
Supply Voltage (min)
4.5 V
Maximum Operating Current
90 mA
Organization
256 K x 16
Maximum Operating Temperature
+ 85 C
Minimum Operating Temperature
- 40 C
Mounting Style
SMD/SMT
Number Of Ports
1
Operating Supply Voltage
5 V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
428-1923
CY7C1041D-10ZSXI
CY7C1041D-10ZSXI
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
CY7C1041D-10ZSXI
Manufacturer:
SANYO
Quantity:
67
Company:
Part Number:
CY7C1041D-10ZSXI
Manufacturer:
CYPRESS
Quantity:
6 100
Part Number:
CY7C1041D-10ZSXI
Manufacturer:
CYPRESS
Quantity:
20 000
Document #: 38-05472 Rev. *E
Switching Waveforms
Write Cycle No. 2 (BLE or BHE Controlled)
Write Cycle No. 3 (WE Controlled, OE HIGH During Write)
Note:
19. During this period the I/Os are in the output state and input signals should not be applied.
BHE, BLE
DATAI/O
ADDRESS
ADDRESS
DATA I/O
BHE, BLE
WE
CE
CE
WE
OE
NOTE 19
(continued)
t
t
SA
SA
t
HZOE
t
AW
t
AW
t
SCE
t
WC
t
[16, 17]
WC
DATA
t
t
PWE
t
t
SD
BW
t
PWE
SCE
IN
VALID
t
SD
t
HD
t
HA
t
HA
t
HD
CY7C1041D
Page 6 of 11
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