HYB25D128800CE-6 Qimonda, HYB25D128800CE-6 Datasheet - Page 12

IC DDR SDRAM 128MBIT 66TSOP

HYB25D128800CE-6

Manufacturer Part Number
HYB25D128800CE-6
Description
IC DDR SDRAM 128MBIT 66TSOP
Manufacturer
Qimonda
Datasheet

Specifications of HYB25D128800CE-6

Format - Memory
RAM
Memory Type
DDR SDRAM
Memory Size
128M (16M x 8)
Speed
166MHz
Interface
Parallel
Voltage - Supply
2.3 V ~ 2.7 V
Operating Temperature
0°C ~ 70°C
Package / Case
66-TSOPII
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
675-1005-2

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
HYB25D128800CE-6
Manufacturer:
INFENION
Quantity:
417
Internet Data Sheet
HYB25D128xxxC[C/E/F/T](L)
128-Mbit Double-Data-Rate SDRAM
3
Functional Description
The 128-Mbit Double-Data-Rate SDRAM is a high-speed CMOS, dynamic random-access memory containing
134,217,728 bits. The 128-Mbit Double-Data-Rate SDRAM is internally configured as a quad-bank DRAM.
The 128-Mbit Double-Data-Rate SDRAM uses a double-data-rate architecture to achieve high-speed operation. The double-
data-rate architecture is essentially a 2n prefetch architecture, with an interface designed to transfer two data words per clock
cycle at the I/O pins. A single read or write access for the 128-Mbit Double-Data-Rate SDRAM consists of a single 2n-bit wide,
one clock cycle data transfer at the internal DRAM core and two corresponding n-bit wide, one-half clock cycle data transfers
at the I/O pins.
Read and write accesses to the DDR SDRAM are burst oriented; accesses start at a selected location and continue for a
programmed number of locations in a programmed sequence. Accesses begin with the registration of an Active command,
which is then followed by a Read or Write command. The address bits registered coincident with the Active command are used
to select the bank and row to be accessed (BA0, BA1 select the bank; A0-A11 select the row). The address bits registered
coincident with the Read or Write command are used to select the starting column location for the burst access.
Prior to normal operation, the DDR SDRAM must be initialized. The following sections provide detailed information covering
device initialization, register definition, command descriptions and device operation.
Rev. 1.51, 2006-09
12
03292006-U5AN-6TI1

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