HYB25D128800CE-6 Qimonda, HYB25D128800CE-6 Datasheet - Page 19

• Manufacturer Part Number: HYB25D128800CE-6
• Description: IC DDR SDRAM 128MBIT 66TSOP
• Manufacturer: Qimonda

Specifications of HYB25D128800CE-6

• Format - Memory: RAM
• Memory Type: DDR SDRAM
• Memory Size: 128M (16M x 8)
• Speed: 166MHz
• Interface: Parallel
• Voltage - Supply: 2.3 V ~ 2.7 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 66-TSOPII
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 675-1005-2

7) Reads or Writes listed in the Command/Action column include Reads or Writes with Auto Precharge enabled and Reads or Writes with
8) Requires appropriate DM masking.
9) Concurrent Auto Precharge:
10) A Write command may be applied after the completion of data output.
Rev. 1.51, 2006-09
03292006-U5AN-6TI1
From Command
WRITE w/AP
Read w/AP
Auto Precharge disabled.
This device supports “Concurrent Auto Precharge”. When a read with auto precharge or a write with auto precharge is enabled any
command may follow to the other banks as long as that command does not interrupt the read or write data transfer and all other limitations
apply (e.g. contention between READ data and WRITE data must be avoided). The minimum delay from a read or write command with
auto precharge enable, to a command to a different banks is summarized in
To Command (different bank)
Read or Read w/AP
Write to Write w/AP
Precharge or Activate
Read or Read w/AP
Write or Write w/AP
Precharge or Activate
19
Minimum Delay with Concurrent Auto
Precharge Support
1 + (BL/2) +
BL/2
1
BL/2
CL (rounded up) + BL/2
1
Table
Truth Table 5: Concurrent Auto Precharge
15.
t
128-Mbit Double-Data-Rate SDRAM
WTR
HYB25D128xxxC[C/E/F/T](L)
Internet Data Sheet
TABLE 15
Unit
t
t
t
t
t
t
CK
CK
CK
CK
CK
CK