HYB25D128800CE-6 Qimonda, HYB25D128800CE-6 Datasheet - Page 9

• Manufacturer Part Number: HYB25D128800CE-6
• Description: IC DDR SDRAM 128MBIT 66TSOP
• Manufacturer: Qimonda

Specifications of HYB25D128800CE-6

• Format - Memory: RAM
• Memory Type: DDR SDRAM
• Memory Size: 128M (16M x 8)
• Speed: 166MHz
• Interface: Parallel
• Voltage - Supply: 2.3 V ~ 2.7 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 66-TSOPII
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 675-1005-2

Rev. 1.51, 2006-09
03292006-U5AN-6TI1
Ball#/Pin#
E7, 16
E9, 13
F7, 20
F9, 14, 17, 19,
25,43, 50, 53
Abbreviation
I
O
I/O
AI
PWR
GND
NC
Abbreviation
SSTL
LV-CMOS
CMOS
OD
Name
NC
NC
NC
NC
Pin
Type
NC
NC
NC
NC
Description
Standard input-only pin. Digital levels.
Output. Digital levels.
I/O is a bidirectional input/output signal.
Input. Analog levels.
Power
Ground
Not Connected
Description
Serial Stub Terminated Logic (SSTL2)
Low Voltage CMOS
CMOS Levels
Open Drain. The corresponding pin has 2 operational states, active low and tristate, and
allows multiple devices to share as a wire-OR.
Buffer
Type
—
—
—
—
Function
Not Connected
Note:
Not Connected
Note:
Not Connected
Note:
Not Connected
Note:
×
×
×
×
8 and
8 and
8 and
16,
9
×
8 and
×
×
×
4 organization
4 organization
4 organization
×
4 organization
128-Mbit Double-Data-Rate SDRAM
Abbreviations for Buffer Type
HYB25D128xxxC[C/E/F/T](L)
Abbreviations for Pin Type
Internet Data Sheet
TABLE 5
TABLE 6