MT48H4M16LFB4-75:H TR Micron Technology Inc, MT48H4M16LFB4-75:H TR Datasheet - Page 56
MT48H4M16LFB4-75:H TR
Manufacturer Part Number
MT48H4M16LFB4-75:H TR
Description
IC SDRAM 64MBIT 133MHZ 54VFBGA
Manufacturer
Micron Technology Inc
Datasheet
1.MT48H4M16LFB4-75_ITH_TR.pdf
(62 pages)
Specifications of MT48H4M16LFB4-75:H TR
Format - Memory
RAM
Memory Type
Mobile SDRAM
Memory Size
64M (4M x 16)
Speed
133MHz
Interface
Parallel
Voltage - Supply
1.7 V ~ 1.9 V
Operating Temperature
0°C ~ 70°C
Package / Case
54-VFBGA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
557-1392-2
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Figure 43:
PDF: 09005aef8237ed98/Source: 09005aef8237ed68
64mb_x16_Mobile SDRAM_Y24L_2.fm - Rev. C 10/07 EN
A0–A9, A11
Command
BA0, BA1
DQM
CLK
CKE
A10
DQ
t CMS
t CKS
t AS
t AS
t AS
ACTIVE
T0
Row
Row
Bank
t CKH
WRITE – Without Auto Precharge
t CMH
t AH
t AH
t AH
t RCD
t RAS
t RC
Notes:
t CK
T1
NOP
1. For this example, the BL = 4, and the WRITE burst is followed by a “manual” PRECHARGE.
2. 15ns is required between <D
3. A8, A9, and A11 = “Don’t Care.”
Disable auto precharge
t CMS
t CL
quency.
t DS
Column m 3
WRITE
Bank
T2
D
IN
t CMH
t CH
t DH
m
t DS
D
IN
T3
NOP
m + 1
t DH
t DS
D
IN
T4
NOP
m + 2
t DH
56
IN
m + 3> and the PRECHARGE command, regardless of fre-
t DS
D
IN
T5
NOP
m + 3
t DH
Micron Technology, Inc., reserves the right to change products or specifications without notice.
t WR
64Mb: 4 Meg x 16 Mobile SDRAM
NOP
T6
2
PRECHARGE
Single bank
All banks
Bank
T7
©2006 Micron Technology, Inc. All rights reserved.
t RP
NOP
T8
Timing Diagrams
ACTIVE
Row
Row
Bank
Don’t Care
T9
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