MT46H32M32LFCM-5:A TR Micron Technology Inc, MT46H32M32LFCM-5:A TR Datasheet - Page 77

• Manufacturer Part Number: MT46H32M32LFCM-5:A TR
• Description: IC DDR SDRAM 1GBIT 90VFBGA
• Manufacturer: Micron Technology Inc

Specifications of MT46H32M32LFCM-5:A TR

• Format - Memory: RAM
• Memory Type: Mobile DDR SDRAM
• Memory Size: 1G (32M x 32)
• Speed: 200MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.95 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 90-VFBGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 557-1385-2

Figure 41: WRITE-to-PRECHARGE – Uninterrupting
PDF: 09005aef82ce3074
1gb_ddr_mobile_sdram_t48m.pdf - Rev. K 07/09 EN
Command
Address
t
t
t
DQSS (NOM)
DQSS (MIN)
DQSS (MAX)
DQS
DQS
DQS
CK#
DQ
DQ
DQ
DM
DM
DM
CK
1
6
6
6
WRITE
Bank a,
Col b
T0
Notes:
2,4
t
DQSS
t
DQSS
t
DQSS
1. An uninterrupted burst 4 of is shown.
2. A10 is LOW with the WRITE command (auto precharge is disabled).
3. PRE = PRECHARGE.
4. The PRECHARGE and WRITE commands are to the same device. However, the PRE-
5.
6. D
D
IN
CHARGE and WRITE commands can be to different devices; in this case,
required and the PRECHARGE command can be applied earlier.
t
WR is referenced from the first positive CK edge after the last data-in pair.
NOP
D
IN
T1
IN
b = data-in for column b.
D
D
IN
IN
T1n
D
IN
D
D
IN
IN
NOP
D
T2
IN
D
D
IN
IN
T2n
D
IN
77
D
IN
NOP
T3
1Gb: x16, x32 Mobile LPDDR SDRAM
Micron Technology, Inc. reserves the right to change products or specifications without notice.
t
NOP
WR
T4
5
Don’t Care
(a or all)
PRE
T5
Bank
3,4
©2007 Micron Technology, Inc. All rights reserved.
WRITE Operation
Transitioning Data
t
WR is not
T6
NOP