MT46H32M32LFCM-6:A TR Micron Technology Inc, MT46H32M32LFCM-6:A TR Datasheet - Page 71
![IC DDR SDRAM 1GBIT 90VFBGA](/photos/7/23/72313/mfg557-90-vfbga_sml.jpg)
MT46H32M32LFCM-6:A TR
Manufacturer Part Number
MT46H32M32LFCM-6:A TR
Description
IC DDR SDRAM 1GBIT 90VFBGA
Manufacturer
Micron Technology Inc
Type
DDR SDRAMr
Specifications of MT46H32M32LFCM-6:A TR
Format - Memory
RAM
Memory Type
Mobile DDR SDRAM
Memory Size
1G (32M x 32)
Speed
166MHz
Interface
Parallel
Voltage - Supply
1.7 V ~ 1.95 V
Operating Temperature
0°C ~ 70°C
Package / Case
90-VFBGA
Organization
32Mx32
Density
1Gb
Address Bus
13b
Access Time (max)
6.5/5.5ns
Maximum Clock Rate
166MHz
Operating Supply Voltage (typ)
1.8V
Package Type
VFBGA
Operating Temp Range
0C to 70C
Operating Supply Voltage (max)
1.95V
Operating Supply Voltage (min)
1.7V
Supply Current
140mA
Pin Count
90
Mounting
Surface Mount
Operating Temperature Classification
Commercial
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
557-1334-2
Figure 34: WRITE Burst
PDF: 09005aef82ce3074
1gb_ddr_mobile_sdram_t48m.pdf - Rev. L 04/10 EN
Notes:
Command
t
t
t
DQSS (NOM)
DQSS (MIN)
DQSS (MAX)
1. An uninterrupted burst of 4 is shown.
2. A10 is LOW with the WRITE command (auto precharge is disabled).
3. D
Address
DQS
DQS
DQS
DQ
DQ
DQ
CK#
DM
DM
DM
IN
CK
b = data-in for column b.
3
3
3
WRITE
Bank a,
Col b
T0
1,2
t DQSS
t DQSS
t DQSS
D
b
IN
71
NOP
D
T1
b
IN
b+1
D
D
b
IN
IN
Don’t Care
b+1
D
1Gb: x16, x32 Mobile LPDDR SDRAM
IN
Micron Technology, Inc. reserves the right to change products or specifications without notice.
b+2
D
b+1
D
IN
IN
NOP
b+2
T2
D
IN
b+2
D
b+3
D
IN
IN
T2n
b+3
D
IN
Transitioning Data
b+3
D
IN
T3
NOP
© 2007 Micron Technology, Inc. All rights reserved.
WRITE Operation