CY62147EV30LL-55ZSXE Cypress Semiconductor Corp, CY62147EV30LL-55ZSXE Datasheet - Page 9
![IC SRAM 4MBIT 55NS 44TSOP](/photos/7/23/72387/428-44-tsop_sml.jpg)
CY62147EV30LL-55ZSXE
Manufacturer Part Number
CY62147EV30LL-55ZSXE
Description
IC SRAM 4MBIT 55NS 44TSOP
Manufacturer
Cypress Semiconductor Corp
Type
Asynchronousr
Datasheet
1.CY62147EV30LL-45ZSXI.pdf
(16 pages)
Specifications of CY62147EV30LL-55ZSXE
Memory Size
4M (256K x 16)
Package / Case
44-TSOP II
Format - Memory
RAM
Memory Type
SRAM
Speed
55ns
Interface
Parallel
Voltage - Supply
2.2 V ~ 3.6 V
Operating Temperature
-40°C ~ 125°C
Access Time
55 ns
Supply Voltage (max)
3.6 V
Supply Voltage (min)
2.2 V
Maximum Operating Current
25 mA
Maximum Operating Temperature
+ 125 C
Minimum Operating Temperature
- 40 C
Mounting Style
SMD/SMT
Number Of Ports
1
Operating Supply Voltage
3 V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Switching Waveforms
Notes
Document Number: 38-05440 Rev. *J
31. BGA packaged device is offered in single CE and dual CE options. In this data sheet, for a dual CE device, CE refers to the internal logical combination of CE
32. If CE goes HIGH simultaneously with WE = V
33. During this period, the I/Os are in output state. Do not apply input signals.
CE
ADDRESS
ADDRESS
BHE/BLE
BHE/BLE
DATA I/O
DATA I/O
2
such that when CE
WE
WE
CE
CE
NOTE 33
1
NOTE 33
is LOW and CE
t
SA
Figure 11. Write Cycle No. 4: BHE/BLE Controlled, OE LOW
(continued)
t
SA
Figure 10. Write Cycle No. 3: WE Controlled, OE LOW
2
is HIGH, CE is LOW. For all other cases CE is HIGH.
IH
t
HZWE
, the output remains in a high impedance state.
t
HZWE
t
t
AW
AW
t
t
t
SCE
BW
SCE
t
PWE
t
t
WC
WC
t
PWE
t
BW
DATA
DATA
t
SD
t
SD
IN
IN
t
[31, 32]
HD
t
HD
t
CY62147EV30 MoBL
t
HA
t
HA
[31, 32]
LZWE
t
LZWE
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